SI4431ADY datasheet(1/4 Pages) VISHAY

No. de pieza	SI4431ADY

Descripción Electrónicos	P-Channel 30-V (D-S) MOSFET

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Fabricante Electrónico	VISHAY [Vishay Siliconix]

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FEATURES

D TrenchFETr Power MOSFET

Si4431ADY

Vishay Siliconix

Document Number: 71803

S-95713—Rev. C, 18-Feb-02

www.vishay.com

1

P-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY

VDS (V)

rDS(on) (W)

ID (A)

- 30

0.030 @ VGS = - 10 V

- 7.2

- 30

0.052 @ VGS = - 4.5 V

- 5.5

SD

S

D

SD

G

D

SO-8

5

6

7

8

Top View

2

3

4

1

S

G

D

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

VDS

-30

V

Gate-Source Voltage

VGS

"20

V

Continuous Drain Current (TJ = 150_C)a

TA = 25_C

ID

- 7.2

- 5.3

Continuous Drain Current (TJ = 150_C)a

TA = 70_C

ID

- 5.8

- 4.2

A

Pulsed Drain Current

IDM

-30

A

continuous Source Current (Diode Conduction)a

IS

- 2.1

- 1.3

Maximum Power Dissipationa

TA = 25_C

PD

2.5

1.35

W

Maximum Power Dissipationa

TA = 70_C

PD

1.6

0.87

W

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Mi

J

ti

t A bi

ta

t

v 10 sec

R

35

50

Maximum Junction-to-Ambienta

Steady State

RthJA

75

92

_C/W

Maximum Junction-to-Foot

Steady State

RthJF

17

25

C/W

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

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