SI4925BDY datasheet(1/6 Pages) VISHAY

No. de pieza	SI4925BDY

Descripción Electrónicos	Dual P-Channel 30-V (D-S) MOSFET

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FEATURES

D TrenchFETr Power MOSFET

D Advanced High Cell Density

Process

APPLICATIONS

D Load Switches

− Notebook PCs

− Desktop PCs

− Game Stations

Pb-free

Available

Si4925BDY

Vishay Siliconix

Document Number: 72001

S-50366—Rev. C, 28-Feb-05

www.vishay.com

1

Dual P-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY

VDS (V)

rDS(on) (W)

ID (A)

−30

0.025 @ VGS = −10 V

−7.1

−30

0.041 @ VGS = −4.5 V

−5.5

S1

D1

G1

D1

S2

D2

G2

D2

SO-8

5

6

7

8

Top View

2

3

4

1

S1

G1

D1

P-Channel MOSFET

S2

G2

D2

P-Channel MOSFET

Ordering Information: Si4925BDY

Si4925BDY—T1 (with Tape and Reel)

Si4925BDY—E3 (Lead (Pb)-Free)

Si4925BDY-T1—E3 (Lead (Pb)-Free) with Tape and Reel)

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

VDS

−30

V

Gate-Source Voltage

VGS

"20

V

Continuous Drain Current (TJ = 150_C)a

TA = 25_C

ID

−7.1

−5.3

Continuous Drain Current (TJ = 150_C)a

TA = 70_C

ID

−5.7

−4.3

A

Pulsed Drain Current

IDM

−40

A

continuous Source Current (Diode Conduction)a

IS

−1.7

−0.9

Maximum Power Dissipationa

TA = 25_C

PD

2.0

1.1

W

Maximum Power Dissipationa

TA = 70_C

PD

1.3

0.7

W

Operating Junction and Storage Temperature Range

TJ, Tstg

−55 to 150

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Mi

J

ti

t A bi ta

t v 10 sec

R

50

62.5

Maximum Junction-to-Ambienta

Steady State

RthJA

85

110

_C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

30

40

C/W

Notes

a.

Surface Mounted on 1 ” x 1” FR4 Board.

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SI4925BDY Datasheet(PDF) 1 Page - Vishay Siliconix

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