KRX210E datasheet(2/4 Pages) KEC

No. de pieza	KRX210E

Descripción Electrónicos	SEMICONDUCTOR

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Fabricante Electrónico	KEC [KEC(Korea Electronics)]

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2014. 3. 31

2/4

KRX210E

Revision No : 3

Q2 ELECTRICAL CHARACTERISTICS (Ta=25℃)

Note : * Characteristic of Transistor Only.

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT.

Output Cut-off Current

IO(OFF)

VO=-30V, VI=0

-

-100

㎁

DC Current Gain

GI

VO=-5V, IO=-100㎃

140

-

Output Voltage

VO(ON)

IO=-50㎃, II=-2.5㎃

-

-0.07

-0.3

V

Input Voltage (ON)

VI(ON)

VO=-0.3V, IO=-20㎃

-

-2.5

V

Input Voltage (OFF)

VI(OFF)

VO=-5V, IO=-0.1㎃

-0.3

-

V

Transition Frequency

fT *

VO=-10V, IO=-5㎃, f=100㎒

-

260

-

㎒

Input Current

II

VI=-5V

-

-6.4

㎃

Input resistance

R1

-

0.7

1

1.3

㏀

Resistance Ratio

R2/R1

-

8

10

12

-

Note : * Characteristic of Transistor Only.

Q1 ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT.

Output Cut-off Current

IO(OFF)

VO=50V, VI=0

-

500

㎁

DC Current Gain

GI

VO=5V, IO=10㎃

50

80

-

Output Voltage

VO(ON)

IO=10㎃, II=0.5㎃

-

0.1

0.3

V

Input Voltage (ON)

VI(ON)

VO=0.2V, IO=5㎃

-

1.8

2.4

V

Input Voltage (OFF)

VI(OFF)

VO=5V, IO=0.1㎃

1.0

1.2

-

V

Transition Frequency

fT *

VO=10V, IO=5㎃

-

200

-

㎒

Input Current

II

VI=5V

-

0.88

㎃

Input resistance

R1

-

7

10

13

㏀

Resistance Ratio

R2/R1

-

0.8

1

1.2

-

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