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AM90N10-19P Datasheet(PDF) 1 Page - Analog Power

No. de pieza AM90N10-19P
Descripción Electrónicos  N-Channel 100-V (D-S) MOSFET
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Fabricante Electrónico  ANALOGPOWER [Analog Power]
Página de inicio  http://www.analogpowerinc.com/index.html
Logo ANALOGPOWER - Analog Power

AM90N10-19P Datasheet(HTML) 1 Page - Analog Power

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Analog Power
AM90N10-19P
N-Channel 100-V (D-S) MOSFET
VDS (V)
ID (A)
Symbol
Limit
Units
VDS
100
VGS
±20
Continuous Drain Current
a
TC=25°C
ID
90
IDM
300
TC=25°C
IS
90
A
Power Dissipation
a
TC=25°C
PD
300
W
TJ, Tstg
-55 to 175
°C
Symbol
Maximum
Units
RθJA
62.5
RθJC
0.5
Notes
a.
Package Limited
b.
Pulse width limited by maximum junction temperature
c.
Surface Mounted on 1” x 1” FR4 Board.
A
Maximum Junction-to-Ambient
c
Maximum Junction-to-Case
Continuous Source Current (Diode Conduction)
a
90
a
Gate-Source Voltage
PRODUCT SUMMARY
100
rDS(on) (mΩ)
Pulsed Drain Current
b
THERMAL RESISTANCE RATINGS
°C/W
Parameter
Operating Junction and Storage Temperature Range
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
V
Parameter
Drain-Source Voltage
19 @ VGS = 10V
24 @ VGS = 5.5V
Key Features:
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
Typical Applications:
• LED Inverter Circuits
• DC/DC Conversion Circuits
• Motor drives
DRAIN
connected
to TAB
© Preliminary
1
Publication Order Number:
DS_AM90N10-19P_1A


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