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AM3949P Datasheet(Hoja de datos) 1 Page - Analog Power

No. de Pieza. AM3949P
Descripción  P-Channel 40-V (D-S) MOSFET
Descarga  3 Pages
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Fabricante  ANALOGPOWER [Analog Power]
Página de inicio  http://www.analogpowerinc.com/index.html
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AM3949P
Analog Power
PRELIMINARY
Publication Order Number:
DS-AM3949_A
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r
DS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
VDS (V)
rDS(on) (Ω)ID (A)
0.185 @VGS=-10V
-2.5
0.240 @VGS=-4.5V
-1.9
-40
PRODUCTSUMMARY
P-Channel 40-V (D-S) MOSFET
•Low r
DS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
TSOP-6 saves board space
Fast switching speed
High performance trench technology
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
Symbol Maximum Units
VDS
-40
VGS
±20
TA=25
oC-2.5
TA=70
oC-1.9
IDM
-10
IS
±1.6
A
TA=25
oC1.15
TA=70
oC0.7
TJ, Tstg -55 to 150
oC
Power Dissipation
a
PD
Operating Junction and Storage Temperature Range
W
Continuous Source Current (Diode Conduction)
a
ABSOLUTE MAXIMUM RATINGS (TA = 25
oC UNLESS OTHERWISE NOTED)
Parameter
Pulsed Drain Current
b
V
Gate-Source Voltage
Drain-Source Voltage
Continuous Drain Current
a
ID
A
S
2
D
2
G
2
P-Channel MOSFET
S
1
D
1
P-Channel MOSFET
TSOP-6
Top View
D1
S1
D2
G1
S2
G2
1
2
3
6
5
4
G
1
Symbol
Typ
Max
t <= 10 sec
93
110
Steady State
130
150
THERMAL RESISTANCE RATINGS
Maximum Junction-to-Ambient
a
oC/W
RthJA
Parameter




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