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SS7505 Datasheet(PDF) 2 Page - GOOD-ARK Electronics |
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SS7505 Datasheet(HTML) 2 Page - GOOD-ARK Electronics |
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2 / 7 page  SSF7505 75V N-Channel MOSFET www.goodark.com Page 2 of 7 Rev.1.0 Thermal Resistance Symbol Characteristics Typ. Max. Units RθJC Junction-to-case③ — 0.55 ℃/W Junction-to-ambient (t ≤ 10s) ④ — 62 ℃/W RθJA Junction-to-Ambient (PCB mounted, steady-state) ④ — 40 ℃/W Electrical Characteristics @TA=25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source breakdown voltage 75 — — V VGS = 0V, ID = 250μA — 3.3 5 VGS=10V,ID = 30A RDS(on) Static Drain-to-Source on-resistance — 6.25 — mΩ TJ = 125℃ 2 — 4 VDS = VGS, ID = 250μA VGS(th) Gate threshold voltage — 2.0 — V TJ = 125℃ — — 1 VDS = 75V,VGS = 0V IDSS Drain-to-Source leakage current — — 50 μA TJ = 125°C — — 100 VGS =20V IGSS Gate-to-Source forward leakage -100 — — nA VGS = -20V Qg Total gate charge — 221 — Qgs Gate-to-Source charge — 42 — Qgd Gate-to-Drain("Miller") charge — 70 — nC ID = 30A, VDS=30V, VGS = 10V td(on) Turn-on delay time — 25 — tr Rise time — 24 — td(off) Turn-Off delay time — 125 — tf Fall time — 53 — ns VGS=10V, VDS=30V, RL=15Ω, RGEN=2.55Ω Ciss Input capacitance — 9139 — Coss Output capacitance — 757 — Crss Reverse transfer capacitance — 669 — pF VGS = 0V VDS = 25V ƒ = 600KHz Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current (Body Diode) — — 170 A ISM Pulsed Source Current (Body Diode) — — 670 A MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage — 0.84 1.3 V IS=30A, VGS=0V trr Reverse Recovery Time — 47 — ns Qrr Reverse Recovery Charge — 97 — nC TJ = 25°C, IF =75A, di/dt = 100A/μs |
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