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FDS7779Z Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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FDS7779Z Datasheet(HTML) 3 Page - Fairchild Semiconductor |
3 / 5 page FDS7779Z Rev C1 (W) 0 10 20 30 40 50 00.5 11.5 2 -VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = -10V -3.0V -3.5V -6.0V -4.5V 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 0 15304560 -ID, DRAIN CURRENT (A) VGS = - 3.5V -6.0V -4.5V -10V -5.0V -8.0V -4.0V 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE ( oC) ID = -16A VGS = -10V 0.01 0.01 0.02 0.02 0.03 0.03 24 68 10 -VGS, GATE TO SOURCE VOLTAGE (V) ID = -8A TA = 125 oC TA = 25 oC 0 20 40 60 80 1.5 2 2.5 3 3.5 4 -VGS, GATE TO SOURCE VOLTAGE (V) TA = -55 oC 25 oC 125 oC VDS = -5V 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) VGS = 0V TA = 125 oC 25 oC -55 oC Typical Characteristics Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. igure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. |
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