BCP53 datasheet(1/2 Pages) HOTTECH

No. de pieza	BCP53

Descripción Electrónicos	Plastic-Encapsulate Transistors

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Fabricante Electrónico	HOTTECH [GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.]

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Plastic-Encapsulate Transistors

GUANGDONG

HOTTECH

INDUSTRIAL

CO,. LTD.

FEATURES

For AF driver and output stages

High collector current

Low collector-emitter saturation voltage

Complementary types: BCP54...BCP56 (NPN)

MAXIMUM RATINGS (TA=25

unless otherwise noted)

Parameter

Symbol

BCP51

BCP52

BCP53

Unit

Collector-Base Voltage

V

CBO

-45

-60

-100

V

Collector-Emitter Voltage

V

CEO

-45

-60

-80

V

Emitter-Base Voltage

V

EBO

-5

V

Collector Current -Continuous

I

C

-1000

mA

Collector Power Dissipation

I

C

1.5

W

Thermal Resistance Junction to Ambient

RθJA

94

Storage Temperature

Tstg

-55 to +150

ELECTRICAL CHARACTERISTICS (Tamb=25

unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Max

Unit

Collector-base breakdown voltage

BCP51

BCP52

BCP53

VCBO

IC=- 0.1mA,IE=0

-45

-60

-100

V

Collector-emitter breakdown voltage

BCP51

BCP52

BCP53

VCEO

IC= -10mA,IB=0

-45

-60

-80

V

Base-emitter breakdown voltage

VEBO

IC= -10μA,IE=0

-5

V

Collector cut-off current

ICBO

VCB= -30 V, IE=0

-100

nA

DC current gain

hFE(1)

VCE=-2V, IC=-5mA

25

hFE(2)

VCE= -2V, IC=-150m A

63

250

hFE(3)

VCE= -2V, IC=-500m A

25

Collector-emitter saturation voltage

VCE(sat)

IC=-500mA,IB=-50mA

-0.5

V

Base-emitter voltage

VBE

VCE=-2V, IC=-500m A

-1

V

Transition frequency

fT

VCE=-10V,IC=-50mA,f=100MHz

100

MHz

BCP51/52/53(PNP)

1. BASE

3. EMITTER

SOT-223

2. COLLECTO

CLASSIFICATION OF

hFE(2)

Rank

BCP51-10, BCP52 -10, BCP53-10

BCP51-16, BCP52 -16, BCP53-16

Range

63-160

100-250

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BCP53 Datasheet(PDF) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

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