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DMG301NU Datasheet(PDF) 2 Page - Diodes Incorporated

No. de pieza DMG301NU
Descripción Electrónicos  25V N-CHANNEL ENHANCEMENT MODE MOSFET
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Fabricante Electrónico  DIODES [Diodes Incorporated]
Página de inicio  http://www.diodes.com
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DMG301NU Datasheet(HTML) 2 Page - Diodes Incorporated

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DMG301NU
Document number: DS36226 Rev. 3 - 2
2 of 6
www.diodes.com
September 2014
© Diodes Incorporated
DMG301NU
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
25
V
Gate-Source Voltage
VGSS
8
V
Continuous Drain Current (Note 6) VGS = 4.5V
Steady
State
TA = +25°C
TA = +70°C
ID
0.26
0.21
A
Continuous Drain Current (Note 6) VGS = 2.7V
Steady
State
TA = +25°C
TA = +70°C
ID
0.23
0.18
A
Pulsed Drain Current (
10μs pulse, duty cycle = 1%)
IDM
1.5
A
Maximum Body Diode Continuous Current (Note 6)
IS
0.5
A
Thermal Characteristics
Characteristic
Symbol
Value
Units
Total Power Dissipation
(Note 5)
PD
0.32
W
(Note 6)
0.4
Thermal Resistance, Junction to Ambient
(Note 5)
RθJA
369
°C/W
(Note 6)
296
Thermal Resistance, Junction to Case
(Note 6)
RθJC
115
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
25
V
VGS = 0V, ID = 250µA
Zero Gate Voltage Drain Current
IDSS
1.0
µA
VDS = 20V, VGS = 0V
Gate-Body Leakage
IGSS
100
nA
VGS = 8V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(th)
0.7
1.1
V
VDS = VGS, ID = 250µA
Static Drain-Source On-Resistance
RDS(ON)
4
VGS = 4.5V, ID = 0.4A

5
VGS = 2.7V, ID = 0.2A
Forward Transconductance
gFS
1
S
VDS = 5V, ID = 0.4A
Diode Forward Voltage
VSD
0.76
1.2
V
VGS = 0V, IS = 0.29A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Ciss
27.9
42
pF
VDS = 10V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Coss
6.1
9.2
Reverse Transfer Capacitance
Crss
2.0
3.0
Gate Resistance
RG

26.4

VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge
Qg
0.36
nC
VGS = 4.5V, VDS = 5V,
ID = 0.2A
Gate-Source Charge
Qgs
0.06
Gate-Drain Charge
Qgd
0.04
Turn-On Delay Time
tD(on)
2.9
nS
VGS = 4.5V, VDS = 6V
ID = 0.5A, RG = 50Ω
Turn-On Rise Time
tr
1.8
Turn-Off Delay Time
tD(off)

6.6

Turn-Off Fall Time
tf

2.3

Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.


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