2SA1162 datasheet(1/2 Pages) HOTTECH

No. de pieza	2SA1162

Descripción Electrónicos	Plastic-Encapsulate Transistors

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Fabricante Electrónico	HOTTECH [GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.]

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Plastic-Encapsulate Transistors

GUANGDONG

HOTTECH

INDUSTRIAL

CO,. LTD.

FEATURES

Low noise : NF= 1dB(Typ.),10dB (Max.)

Complementary to 2SC2712.

Small Package.

MAXIMUM RATINGS (TA=25

unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

V

CBO

-50

V

Collector-Emitter Voltage

V

CEO

-50

V

Emitter-Base Voltage

V

EBO

-5

V

Collector Current -Continuous

I

C

-150

mA

Collector Power Dissipation

PC

150

mW

Junction Temperature

T

J

125

Storage Temperature

Tstg

-55 to +150

ELECTRICAL CHARACTERISTICS (Tamb=25

unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

VCBO

IC=-100u A,IE=0

-50

V

Collector-emitter breakdown voltage

VCEO

IC=-1mA,IB=0

-50

V

Emitter-base breakdown voltage

VEBO

IE=-100 u A,IC=0

-5

V

Collector cut-off current

ICBO

VCB=-50V,IE=0

-0.1

u A

Emitter cut-off current

IEBO

VEB=-5V,IC=0

-0.1

u A

DC current gain

hFE

VCE=-6V,IC=-2mA

70

400

Collector-emitter saturation voltage

VCE(sat)

IC=-100mA,IB=-10mA

-0.3

V

Transition frequency

fT

VCE=-10V,IC=-1mA

80

MHz

Collector output capacitance

Cob

VCB=-10V,IE=0,f=1MHz

7

pF

Noise figure

NF

VCE=-6V,Ic=0.1mA,

f=1KHZ,Rg=10KΩ

10

dB

Rank

SO

SY

SG

Range

70-140

120-240

200-400

2SA1162(PNP)

1. BASE

2. EMITTER

SOT-23

3. COLLECTO

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2SA1162 Datasheet(PDF) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

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