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TDA9888 Datasheet(PDF) 3 Page - NXP Semiconductors

No. de pieza TDA9888
Descripción Electrónicos  DVB selective AGC amplifier
Download  22 Pages
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

TDA9888 Datasheet(HTML) 3 Page - NXP Semiconductors

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2004 Nov 02
3
Philips Semiconductors
Product specification
DVB selective AGC amplifier
TDA9888TS; TDA9889TS
QUICK REFERENCE DATA
Note
1. Some parameters can be decreased at VP = 4.5 V.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VP
supply voltage
note 1
4.5
5
5.5
V
IP
supply current
46
55
64
mA
Vo(LIF)(p-p)
typical low IF operating output
voltage (peak-to-peak value)
2
V
GIF(max)
maximum conversion gain
output peak-to-peak level to
input RMS level ratio
85
90
dB
GIF(cr)
IF gain control range
see Fig.3
60
70
dB
fosc
synthesizer controlled oscillator
frequencies
see Tables 1 and 2
31
MHz
31.5
MHz
32
MHz
40
MHz
53
MHz
φN(synth)
synthesizer phase noise
performance
at 1 kHz
89
99
dBc
at 10 kHz
89
97
dBc
at 100 kHz
98
102
dBc
αLIF
low IF band amplitude characteristic
0 dB at middle of band
(standard independent)
−0.9
+0.9
dB
αN−1
low-pass filter attenuation
8 MHz band; at 15.75 MHz
15
−−
dB
αN+1
suppression of IF input frequencies
below wanted band at low IF output
input frequency between
21 and 31 MHz; referenced
to 36 MHz
30
−−
dB
C/N
carrier-to-noise ratio at low IF
at
∆f > 1 MHz; see Fig.5
112
116
dBc/Hz
PSRR
power supply ripple rejection
[residual ripple AM, modulation
factor m at 2 V (p-p) low IF signal]
fripple = 70 Hz; see Fig.7
1.4
%


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