2SC5902 datasheet(1/3 Pages) PANASONIC

No. de pieza	2SC5902

Descripción Electrónicos	Silicon NPN triple diffusion mesa type

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Fabricante Electrónico	PANASONIC [Panasonic Semiconductor]

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Power Transistors

1

Publication date: March 2004

SJD00304AED

2SC5902

Silicon NPN triple diffusion mesa type

Horizontal deflection output for TV

■ Features

• High breakdown voltage: V

CBO ≥ 1 700 V

• Wide safe operation area

• Built-in dumper diode

■ Absolute Maximum Ratings T

C

= 25°C

■ Electrical Characteristics T

C

= 25°C ± 3°C

Unit: mm

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Emitter-base voltage (Collector open)

VEBO

IE = 500 mA, IC = 07

V

Forward voltage

VF

IF

= 4.5 A

−2V

Collector-base cutoff current (Emitter open)

ICBO

VCB = 1 000 V, IE = 050

µA

VCB = 1 700 V, IE = 01

mA

Forward current transfer ratio

hFE

VCE

= 5 V, I

C

= 4.5 A

5

10



Collector-emitter saturation voltage

VCE(sat)

IC = 4.5 A, IB = 1.13 A

3

V

Base-emitter saturation voltage

VBE(sat)

IC = 4.5 A, IB = 1.13 A

1.5

V

Transition frequency

fT

VCE

= 10 V, I

C

= 0.1 A, f = 0.5 MHz

3

MHz

Storage time

tstg

IC = 4.5 A, Resistance loaded

5.0

µs

Fall time

tf

IB1 = 1.13 A, IB2 = −2.25 A

0.5

µs

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

VCBO

1 700

V

Collector-emitter voltage (E-B short)

VCES

1 700

V

Emitter-base voltage (Collector open)

VEBO

7V

Base current

IB

3A

Collector current

IC

9A

Peak collector current *

ICP

14

A

Collector power dissipation

PC

40

W

Ta

= 25°C3

Junction temperature

Tj

150

°C

Storage temperature

Tstg

−55 to +150

°C

15.5±0.5

3.0±0.3

(4.0)

2.0±0.2

1.1±0.1

5.45±0.3

0.7±0.1

5˚

10.9±0.5

1

5˚

23

φ 3.2±0.1

1: Base

2: Collector

3: Emitter

EIAJ: SC-94

TOP-3E-A1 Package

Note) *: Non-repetitive peak collector current

Internal Connection

B

C

E

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