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STK5F1U3C2D-E Datasheet(PDF) 2 Page - ON Semiconductor

No. de pieza STK5F1U3C2D-E
Descripción Electrónicos  Inverter Power H-IC for 3-phase Motor Drive
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Fabricante Electrónico  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
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STK5F1U3C2D-E
No.A2298-2/15
Electrical Characteristics
at Tc
 25C, VD1, VD2, VD3, VD4=15V
Parameter
Symbol
Conditions
Test
circuit
Ratings
Unit
Min.
Typ.
Max.
Power output section
Collector to emitter cut-off current
ICE
VCE=600V
Fig.1
-
-
100
μA
Bootstrap diode reverse current
IR(BD)
VR(BD)=600V
-
-
100
μA
Collector to emitter saturation
voltage
VCE(sat)
Ic=30A
Upper side
Fig.2
-
1.7
2.5
V
Lower side
-
2.2
3.1
Ic=15A,
Tj=100
C
Upper side
-
1.4
-
Lower side
-
1.7
-
Diode forward voltage
VF
IF=30A
Upper side
Fig.3
-
1.8
2.7
V
Lower side
-
2.3
3.1
IF=15A,
Tj=100
C
Upper side
-
1.45
-
Lower side
-
1.7
-
Junction to case thermal resistance
θj-c(T)
IGBT
-
-
1.8
-
C/W
θj-c(D)
FWD
-
-
2.3
-
C/W
Control (Pre-driver) section
Pre-drive power supply consumption
current
ID
VD1, 2, 3=15V
Fig.4
-
0.05
0.4
mA
VD4=15V
-
1.0
4.0
High level input voltage
Vin H
HIN1, HIN2, HIN3,
LIN1, LIN2, LIN3 to VSS
-
2.5
-
-
V
Low level input voltage
Vin L
-
-
-
0.8
V
Logic 1 input leakage current
IIN+
VIN=+3.3V
100
195
μA
Logic 0 input leakage current
IIN-
VIN=0V
1
μA
Protection section
Over-current protection electric
current
ISD
PW=100μs,RSD=0Ω
Fig.5
37
-
49
A
Vdd and VBx supply undervoltage
positive going input threshold
VddUV+
VBxUV+
10.6
11.1
11.6
V
VDD and VBx supply undervoltage
negative going input threshold
VddUV-
VBxUV-
10.4
10.9
11.4
V
Vdd and VBx supply undervoltage
Ilockout hysteresis
VddUVH
VBxUVH
0.2
V
FAULT terminal input electric current
IOSD
VFAULT=0.1V
-
1
1.5
-
mA
FAULT clearance delay time
FLTCLR
From time fault condition clear
-
18
-
80
ms
Thermistor for substrate temperature
monitor
Rt
Resistance between the TH(18)
and VSS(20) terminals
-
90
-
110
kΩ
Switching character
Switching time
tON
Io=30A, Inductive load
Fig.6
-
0.8
1.5
μs
tOFF
-
1.0
2.0
μs
Turn-on switching loss
Eon
Io=30A, VCC=300V,
VD=15V, L=690μH
-
710
-
μJ
Turn-off switching loss
Eoff
-
570
-
μJ
Total switching loss
Etot
-
1280
-
μJ
Turn-on switching loss
Eon
Io=15A, VCC =300V,
VD=15V, L=690μH,
Tc=100
C
-
360
-
μJ
Turn-off switching loss
Eoff
-
460
-
μJ
Total switching loss
Etot
-
820
-
μJ
Diode reverse recovery energy
Erec
Io=15A, VCC =300V,
VD=15V, L=690μH,
Tc=100
C
-
16
-
μJ
Diode reverse recovery time
Trr
-
62
-
ns
Reverse bias safe operating area
RBSOA
Io = 49A, VCE=450V
Full square
Short circuit safe operating area
SCSOA
VCE= 400V, Tc=100C
4
μs
Electric current output signal level
ISO
Io=30A
-
0.384
0.405
0.427
V
Reference voltage is N terminal = VSS terminal voltage unless otherwise specified.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.


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