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STK5Q4U352J-E Datasheet(PDF) 5 Page - ON Semiconductor

No. de pieza STK5Q4U352J-E
Descripción Electrónicos  Intelligent Power Module (IPM)
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Fabricante Electrónico  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

STK5Q4U352J-E Datasheet(HTML) 5 Page - ON Semiconductor

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5
ABSOLUTE MAXIMUM RATINGS (Notes 1, 2)
1.
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device
functionality should not be assumed, damage may occur and reliability may be affected.
2.
Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for
Safe Operating parameters.
3.
This surge voltage developed by the switching operation due to the wiring inductance between VP and NU,NV,NW terminals.
4.
VBS = VBU to U, VBV to V, VBW to W
5.
Test conditions : AC 2500 V, 1 s
RECOMMENDED OPERATING RANGES (Note 6)
6.
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to
stresses beyond the Recommended Operating Ranges limits may affect device reliability.
Rating
Symbol
Conditions
Value
Unit
Supply voltage
VCC
VP to NU, NV, NW, surge < 500 V
(Note 3)
450
V
Collector-emitter voltage
VCE max
VP to U, V, W ; U to NU ; V to NV ; W to NW
600
V
Output current
Io
VP, U, V, W, NU, NV, NW terminal current
±8
A
VP, U, V, W, NU, NV, NW terminal current,
Tc = 100
C
±4
A
Output peak current
Iop
VP, U, V, W, NU, NV, NW terminal current,
pulse width 1ms
±16
A
Gate driver supply voltages
VDD,VBS
VBU to U, VBV to V, VBW to W, VDD to GND
(Note 4)
0.3 to +20.0
V
Input signal voltage
VIN
HINU, HINV, HINW, LINU, LINV, LINW
0.3 to VDD
V
FAULT terminal voltage
VFAULT
FAULT terminal
0.3 to VDD
V
RCIN terminal voltage
VRCIN
RCIN terminal
0.3 to VDD
V
ITRIP terminal voltage
VITRIP
ITRIP terminal
0.3 to +10.0
V
ENABLE terminal voltage
VENABLE
ENABLE terminal
0.3 to VDD
V
Maximum power dissipation
Pd
IGBT per 1 channel
31
W
Junction temperature
Tj
IGBT, Gate driver IC
150
C
Storage temperature
Tstg
40 to +125
C
Operating case temperature
Tc
IPM case temperature
20 to +100
C
Package mounting torque
Case mounting screw
0.6
Nm
Isolation voltage
Vis
50 Hz sine wave AC 1 minute
(Note 5)
2000
Vrms
Rating
Symbol
Min
Typ
Max
Unit
Supply voltage
VCC
VP to NU, NV, NW
0
280
400
V
Gate driver supply voltage
VBS
VBU to U, VBV to V, VBW to W
12.5
15
17.5
V
VDD
VDD to GND (Note 4)
13.5
15
16.5
ON-state input voltage
VIN(ON)
HINU, HINV, HINW, LINU, LINV, LINW
3.0
5.0
V
OFF-state input voltage
VIN(OFF)
0
0.3
PWM frequency
fPWM
1
20
kHz
Dead time
DT
Turn-off to turn-on (external)
1
μs
Allowable input pulse width
PWIN
ON and OFF
1
μs
Package mounting torque
‘M3’ type screw
0.4
0.6
Nm


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