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STK531U369A-E Datasheet(PDF) 1 Page - ON Semiconductor

No. de pieza STK531U369A-E
Descripción Electrónicos  Inverter IPM
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Fabricante Electrónico  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

STK531U369A-E Datasheet(HTML) 1 Page - ON Semiconductor

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Publication Order Number :
STK531U369A-E/D
www.onsemi.com
©
Semiconductor Components Industries, LLC, 2015
February 2015 - Rev. 1
ORDERING INFORMATION
See detailed ordering and shipping information on page 13 of this data sheet.
STK531U369A-E
Overview
This “Inverter IPM” is highly integrated device containing all High Voltage (HV) control from HV-DC to 3-phase
outputs in a single SIP module (Single-In line Package). Output stage uses IGBT/FRD technology and implements
Under Voltage Protection (UVP) and Over Current Protection (OCP) with a Fault Detection output flag. Internal
Boost diodes are provided for high side gate boost drive.
Function
 Single control power supply due to Internal bootstrap circuit for high side pre-driver circuit
 All control input and status output are at low voltage levels directly compatible with microcontrollers
 Built-in cross conduction prevention
 Externally accessible embedded thermistor for substrate temperature measurement
 The level of the over current protection is adjustable with the external resistor, “RSD”
Certification
 UL Recognized (File number : E339285)
Specifications
Absolute Maximum Ratings at Tc = 25
C
Parameter
Symbol
Remarks
Ratings
Unit
Supply voltage
VCC
P to N, surge < 500V
*1
450
V
Collector-emitter voltage
VCE
P to U, V, W or U, V, W, to N
600
V
Output current
Io
P, N, U, V, W terminal current
±10
A
P, N, U, V, W terminal current at Tc = 100
C
±5
A
Output peak current
Iop
P, N, U, V, W terminal current, PW = 1ms
±20
A
Pre-driver voltage
VD1,2,3,4
VB1 to U, VB2 to V, VB3 to W, VDD to VSS
*2
20
V
Input signal voltage
VIN
HIN1, 2, 3, LIN1, 2, 3
0.3 to VDD
V
FAULT terminal voltage
VFAULT
FAULT terminal
0.3 to VDD
V
Maximum power dissipation
Pd
IGBT per 1 channel
31.2
W
Junction temperature
Tj
IGBT, FRD
150
C
Storage temperature
Tstg
40 to +125
C
Operating case temperature
Tc
IPM case temperature
20 to +100
C
Tightening torque
A screw part
*3
0.9
Nm
Isolation voltage
Vis
50Hz sine wave AC 1 minute
*4
2000
VRMS
Reference voltage is “VSS” terminal voltage unless otherwise specified.
*1 : Surge voltage developed by the switching operation due to the wiring inductance between P and N terminal.
*2 : VD1=VB1 to U, VD2=VB2 to V, VD3=VB3 to W, VD4=VDD to VSS terminal voltage.
*3 : Flatness of the heat-sink should be lower than 0.15mm.
*4 : Test conditions : AC2500V, 1 second.
Inverter IPM
for 3-phase Motor Drive
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.


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