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TPS78825DBVTG4 Datasheet(PDF) 1 Page - Texas Instruments

No. de pieza TPS78825DBVTG4
Descripción Electrónicos  150-mA LOW-NOISE LDO WITH IN-RUSH CURRENT CONTROL FOR USB APPLICATION
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Página de inicio  http://www.ti.com
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TPS78825DBVTG4 Datasheet(HTML) 1 Page - Texas Instruments

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TPS78825, TPS78833
SLVS382A – JUNE 2001 – REVISED JULY 2001
150-mA LOW-NOISE LDO WITH IN-RUSH
CURRENT CONTROL FOR USB APPLICATION
1
www.ti.com
FEATURES
D 150-mA Low-Dropout Regulator
D Available in 2.5 V, 3.3 V
D Programmable Slew Rate Control
D Output Noise Typically 56 µVRMS
D Only 17 µA Quiescent Current at 150 mA
D 1 µA Quiescent Current in Standby Mode
D Dropout Voltage Typically 150 mV at 150 mA
(TPS78833)
D Over Current Limitation
D –40°C to 125°C Operating Junction
Temperature Range
D 5-Pin SOT-23 (DBV) Package
DESCRIPTION
The TPS78825 and TPS78833 are very small (SOT-23)
package, low-noise LDOs that regulate the output
voltage to 2.5 V and 3.3 V with input voltage ranging
from 2.7 V to an absolute maximum of 13.5 V. These
devices output 150 mA with a peak current of 350 mA
(typ). The TPS788xx family uses the SR pin to program
the output voltage slew rate to control the in-rush
current. This is specifically used in the USB application
where large load capacitance is present at start-up. The
TPS788xx devices use only 17
µA of quiescent current
and exhibit only 56
µVRMS of output voltage noise using
a 10
µF output capacitor.
The usual PNP pass transistor has been replaced by a
PMOS pass element. Because the PMOS pass element
behaves as a low-value resistor, the dropout voltage is
very low, typically 150 mV at 150 mA of load current, and
is directly proportional to the load current.
The TPS788xx also features a logic-enabled sleep
mode to shut down the regulator, reducing quiescent
current to 1
µA typical at TJ = 25°C.
0
5
10
15
20
25
–40 –25 –10 5
20 35 50 65 80 95 110 125
IO = 1 mA
VCC = 4.3 V
TA – Free-Air Temperature – °C
QUIESCENT CURRENT
vs
FREE-AIR TEMPERATURE
IO = 150 mA
3
OUTPUT VOLTAGE, ENABLE VOLTAGE
vs
TIME (START-UP)
t – Time – ms
030
20
10
40 50
70
60
80
90 100
VI = 4.3 V
VO = 3.3 V
IO = 150 mA
Co = 10 µF
TJ = 25°C
1
5
0
0
2
C(SR) = 0.01 µF
C(SR) = 0.1 µF
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright
 2001, Texas Instruments Incorporated
3
2
4
5
DBV PACKAGE
(TOP VIEW)
1
IN
GND
EN
OUT
SR


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