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LM4666SDA Datasheet(PDF) 3 Page - National Semiconductor (TI) |
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LM4666SDA Datasheet(HTML) 3 Page - National Semiconductor (TI) |
3 / 15 page Absolute Maximum Ratings (Notes 1, 2) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Supply Voltage (Note1) 6.0V Storage Temperature −65˚C to +150˚C Voltage at Any Input Pin V DD + 0.3V ≥ V ≥ GND - 0.3V Power Dissipation (Note 3) Internally Limited ESD Susceptibility, pins 4, 7, 11, 14 (Note 4) 1kV ESD Susceptibility, all other pins (Note 4) 2.0kV ESD Susceptibility (Note 5) 200V Junction Temperature (T J) 150˚C Thermal Resistance θ JA (SDA) 63˚C/W θ JC (SDA) 12˚C/W Soldering Information See AN-1112 "microSMD Wafers Level Chip Scale Package." Operating Ratings (Notes 1, 2) Temperature Range T MIN ≤ T A ≤ T MAX −40˚C ≤ T A ≤ 85˚C Supply Voltage 2.8V ≤ V DD ≤ 5.5V Electrical Characteristics V DD =5V (Notes 1, 2) The following specifications apply for V DD = 5V and RL =15µH+8 Ω + 15µH unless otherwise specified. Limits apply for T A = 25˚C. Symbol Parameter Conditions LM4666 Units (Limits) Typical Limit (Note 6) (Notes 7, 8) I DD Quiescent Power Supply Current V IN = 0V, No Load V IN = 0V, RL =15µH+8 Ω + 15µH 15 16 mA mA I SD Shutdown Current V SD = GND (Note 9) 0.02 µA V SDIH Shutdown Voltage Input High 1.2 V V SDIL Shutdown Voltage Input Low 1.1 V V GSIH Gain Select Input High 1.2 V V GSIL Gain Select Input Low 1.1 V A V Closed Loop Gain V Gain Select =VDD 6dB A V Closed Loop Gain V Gain Select = GND 12 dB V OS Output Offset Voltage 10 mV T WU Wake-up Time 6 ms P o Output Power THD = 1% (max), f = 1kHz, 22kHz BW 1.2 W THD+N Total Harmonic Distortion+Noise P O = 100mWRMS/Channel, f IN = 1kHz, 22kHz BW, Both channels in phase 0.65 % X TALK Channel Separation P O = 100mWRMS, f = 1kHz 57 dB R IN Differential Input Resistance V Gain Select =VDD 90 k Ω V Gain Select = GND 60 k Ω PSRR Power Supply Rejection Ratio V Ripple = 100mVRMS sine wave, f RIPPLE = 217Hz Inputs terminated to AC GND 60 dB V Ripple = 100mVRMS sine wave, f RIPPLE = 217Hz P OUT = 10mW,1kHz 65 dB CMRR Common Mode Rejection Ratio V Ripple = 100mVRMS, f Ripple = 217Hz, Input referred 48 dB SNR Signal to Noise Ratio P O =1WRMS; A-Weighted Filter 83 dB e OUT Output Noise A-Weighted filter, V in = 0V 200 µV www.national.com 3 |
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