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SI4848DY-T1 Datasheet(PDF) 3 Page - Vishay Siliconix |
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SI4848DY-T1 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 4 page Si4848DY Vishay Siliconix Document Number: 71356 S-03950—Rev. B, 26-May-03 www.vishay.com 3 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 300 600 900 1200 0 30 60 90 120 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 - 50 - 25 0 25 50 75 100 125 150 0 4 8 12 16 20 0 6 12 18 24 30 0.00 0.03 0.06 0.09 0.12 0.15 0 5 10 15 20 25 VDS - Drain-to-Source Voltage (V) Crss Coss Ciss VDS = 75 V ID = 3.5 A ID - Drain Current (A) VGS = 10 V ID = 3.5 A Gate Charge On-Resistance vs. Drain Current Qg - Total Gate Charge (nC) Capacitance On-Resistance vs. Junction Temperature TJ - Junction Temperature (_C) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.00 0.05 0.10 0.15 0.20 0.25 02468 10 TJ = 150_C TJ = 25_C ID = 3.5 A 50 10 1 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) VGS = 6 V VGS = 10 V |
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