SI7456DP-T1 datasheet(2/4 Pages) VISHAY

No. de pieza	SI7456DP-T1

Descripción Electrónicos	N-Channel 100-V (D-S) MOSFET

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Fabricante Electrónico	VISHAY [Vishay Siliconix]

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Si7456DP

Vishay Siliconix

www.vishay.com

2

Document Number: 71603

S-31989—Rev. D, 13-Oct-03

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

2

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

"100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 100 V, VGS = 0 V

1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = 100 V, VGS = 0 V, TJ = 85_C

20

mA

On-State Drain Currenta

ID(on)

VDS w 5 V, VGS = 10 V

40

A

Drain-Source On-State Resistancea

rDS(on)

VGS = 10 V, ID = 9.3 A

0.021

0.025

W

Drain-Source On-State Resistancea

rDS(on)

VGS = 6.0 V, ID = 8.8 A

0.023

0.028

W

Forward Transconductancea

gfs

VDS = 15 V, ID = 9.3 A

35

S

Diode Forward Voltagea

VSD

IS = 4.3 A, VGS = 0 V

0.8

1.2

V

Dynamicb

Total Gate Charge

Qg

36

44

Gate-Source Charge

Qgs

VDS = 50 V, VGS = 10 V, ID = 9.3 A

10

nC

Gate-Drain Charge

Qgd

8.6

Gate Resistance

Rg

0.5

1.27

2.1

W

Turn-On Delay Time

td(on)

20

40

Rise Time

tr

VDD = 50 V, RL = 50 W

10

20

Turn-Off Delay Time

td(off)

VDD = 50 V, RL = 50 W

ID ^ 1 A, VGEN = 10 V, RG = 6 W

46

90

ns

Fall Time

tf

26

50

Source-Drain Reverse Recovery Time

trr

IF = 4.3 A, di/dt = 100 A/ms

50

80

Notes

a.

Pulse test; pulse width v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

8

16

24

32

40

0

123

456

0

8

16

24

32

40

0

1234

5

VGS = 10 thru 6 V

TC = 125_C

-55_C

4 V

25_C

Output Characteristics

Transfer Characteristics

VDS - Drain-to-Source Voltage (V)

VGS - Gate-to-Source Voltage (V)

5 V

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