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BF1211 Datasheet(PDF) 5 Page - NXP Semiconductors |
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BF1211 Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 15 page 2003 Dec 16 5 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs BF1211; BF1211R; BF1211WR DYNAMIC CHARACTERISTICS Common source; Tamb =25 °C; VG2-S =4V; VDS =5V; ID = 15 mA; unless otherwise specified. Note 1. Measured in test circuit Fig.21. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT y fs forward transfer admittance pulsed; Tj =25 °C 253040mS Cig1-ss input capacitance at gate 1 f = 1 MHz − 2.1 2.6 pF Cig2-ss input capacitance at gate 2 f = 1 MHz − 1.1 − pF Coss output capacitance f = 1 MHz − 0.9 − pF Crss reverse transfer capacitance f = 1 MHz − 15 30 fF F noise figure f = 11 MHz; GS = 20 mS; BS =0 − 3.5 − dB f = 400 MHz; YS =YS (opt) − 0.9 1.6 dB f = 800 MHz; YS =YS (opt) − 1.3 2 dB Gtr power gain f = 200 MHz; GS = 2 mS; BS =BS (opt); GL = 0.5 mS; BL =BL (opt) − 34 − dB f = 400 MHz; GS = 2 mS; BS =BS (opt); GL = 1 mS; BL =BL (opt) − 29 − dB f = 800 MHz; GS = 3.3 mS; BS =BS (opt); GL = 1 mS; BL =BL (opt) − 24 − dB Xmod cross-modulation input level for k = 1%; fw = 50 MHz; funw = 60 MHz; note 1 at 0 dB AGC 90 −− dB µV at 10 dB AGC − 92 − dB µV at 40 dB AGC 100 105 − dB µV |
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