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BF1211 Datasheet(PDF) 5 Page - NXP Semiconductors

No. de Pieza. BF1211
Descripción  N-channel dual-gate MOS-FETs
Descarga  15 Pages
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Fabricante  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
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BF1211 Datasheet(HTML) 5 Page - NXP Semiconductors

 
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2003 Dec 16
5
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1211; BF1211R; BF1211WR
DYNAMIC CHARACTERISTICS
Common source; Tamb =25 °C; VG2-S =4V; VDS =5V; ID = 15 mA; unless otherwise specified.
Note
1. Measured in test circuit Fig.21.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
y
fs
forward transfer admittance
pulsed; Tj =25 °C
253040mS
Cig1-ss
input capacitance at gate 1
f = 1 MHz
2.1
2.6
pF
Cig2-ss
input capacitance at gate 2
f = 1 MHz
1.1
pF
Coss
output capacitance
f = 1 MHz
0.9
pF
Crss
reverse transfer capacitance f = 1 MHz
15
30
fF
F
noise figure
f = 11 MHz; GS = 20 mS; BS =0
3.5
dB
f = 400 MHz; YS =YS (opt)
0.9
1.6
dB
f = 800 MHz; YS =YS (opt)
1.3
2
dB
Gtr
power gain
f = 200 MHz; GS = 2 mS; BS =BS (opt);
GL = 0.5 mS; BL =BL (opt)
34
dB
f = 400 MHz; GS = 2 mS; BS =BS (opt);
GL = 1 mS; BL =BL (opt)
29
dB
f = 800 MHz; GS = 3.3 mS; BS =BS (opt);
GL = 1 mS; BL =BL (opt)
24
dB
Xmod
cross-modulation
input level for k = 1%; fw = 50 MHz;
funw = 60 MHz; note 1
at 0 dB AGC
90
−−
dB
µV
at 10 dB AGC
92
dB
µV
at 40 dB AGC
100
105
dB
µV


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