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BF1211 Datasheet(PDF) 6 Page - NXP Semiconductors |
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BF1211 Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 15 page 2003 Dec 16 6 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs BF1211; BF1211R; BF1211WR handbook, halfpage 0 2.5 25 0 5 10 15 20 0.5 1 1.5 2 MDB829 (1) (2) (3) (4) (5) (6) (7) ID (mA) VG1-S (V) Fig.5 Transfer characteristics; typical values. VDS = 5 V; Tj =25 °C. (1) VG2-S =4V. (2) VG2-S = 3.5 V. (3) VG2-S =3V. (4) VG2-S = 2.5 V. (5) VG2-S =2V. (6) VG2-S = 1.5 V. (7) VG2-S =1V. handbook, halfpage 02 4 24 0 8 16 6 MDB830 ID (mA) VDS (V) (1) (2) (3) (4) (5) (6) (7) (8) Fig.6 Output characteristics; typical values. VG2-S = 4 V; Tj =25 °C. (1) VG1-S = 1.5 V. (2) VG1-S = 1.4 V. (3) VG1-S = 1.3 V. (4) VG1-S = 1.2 V. (5) VG1-S = 1.1 V. (6) VG1-S =1V. (7) VG1-S = 0.9 V. (8) VG1-S = 0.8 V. handbook, halfpage 0 100 0 20 40 60 80 0.5 1 1.5 2 MDB831 IG1 ( µA) VG1-S (V) (1) (2) (3) (5) (4) (6) (7) Fig.7 Gate 1 current as a function of gate 1 voltage; typical values. VDS = 5 V; Tj =25 °C. (1) VG2-S =4V. (2) VG2-S = 3.5 V. (3) VG2-S =3V. (4) VG2-S = 2.5 V. (5) VG2-S =2V. (6) VG2-S = 1.5 V. (7) VG2-S =1V. handbook, halfpage 06 30 40 30 10 0 20 12 18 24 MDB832 yfs (mS) ID (mA) (1) (2) (3) (4) (5) (6) Fig.8 Forward transfer admittance as a function of drain current; typical values. VDS = 5 V; Tj =25 °C. (1) VG2-S =4V. (2) VG2-S = 3.5 V. (3) VG2-S =3V. (4) VG2-S = 2.5 V. (5) VG2-S =2V. (6) VG2-S = 1.5 V. |
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