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L7833S Datasheet(PDF) 1 Page - International Rectifier

No. de pieza L7833S
Descripción Electrónicos  HEXFETPower MOSFET
Download  12 Pages
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Fabricante Electrónico  IRF [International Rectifier]
Página de inicio  http://www.irf.com
Logo IRF - International Rectifier

L7833S Datasheet(HTML) 1 Page - International Rectifier

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www.irf.com
1
4/22/04
IRL7833
IRL7833S
IRL7833L
HEXFET® Power MOSFET
Notes
 through † are on page 12
Applications
Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Consumer Use
D2Pak
IRL7833S
TO-220AB
IRL7833
TO-262
IRL7833L
VDSS RDS(on) max Qg
30V
3.8m
:
32nC
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
™
PD @TC = 25°C
Maximum Power Dissipation
g
W
PD @TC = 100°C Maximum Power Dissipation g
Linear Derating Factor
W/°C
TJ
Operating Junction and
°C
TSTG
Storage Temperature Range
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
1.04
RθCS
Case-to-Sink, Flat, Greased Surface
h
0.50
–––
°C/W
RθJA
Junction-to-Ambient
h
–––
62
RθJA
Junction-to-Ambient (PCB Mount)
–––
40
Max.
150
f
110
f
600
± 20
30
10 lbf
yin (1.1Nym)
-55 to + 175
140
0.96
72
PD - 94668B


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