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2SCR574D Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SCR574D Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor 2SCR574D DESCRIPTION · Suitable for middle power drivers · Low VCE(sat) VCE(sat)=0.3V(max)@(IC=1A,IB=50mA) · Complementary NPN types:2SAR574D · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Low frequency amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak 4 A PC Collector Power Dissipation @ TC=25℃ 10 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
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