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CSD13380F3T Datasheet(PDF) 3 Page - Texas Instruments

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No. de Pieza. CSD13380F3T
Descripción  12-V N-Channel FemtoFET MOSFET
Descarga  14 Pages
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Fabricante  TI1 [Texas Instruments]
Página de inicio  http://www.ti.com
Logo TI1 - Texas Instruments

CSD13380F3T Datasheet(HTML) 3 Page - Texas Instruments

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CSD13380F3
www.ti.com
SLPS593 – OCTOBER 2016
Product Folder Links: CSD13380F3
Submit Documentation Feedback
Copyright © 2016, Texas Instruments Incorporated
5 Specifications
5.1 Electrical Characteristics
TA = 25°C (unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
STATIC CHARACTERISTICS
BVDSS
Drain-to-source voltage
VGS = 0 V, IDS = 250 μA
12
V
IDSS
Drain-to-source leakage current
VGS = 0 V, VDS = 9.6 V
50
nA
IGSS
Gate-to-source leakage current
VDS = 0 V, VGS = 8 V
25
nA
VGS(th)
Gate-to-source threshold voltage
VDS = VGS, IDS = 250 μA
0.55
0.85
1.30
V
RDS(on)
Drain-to-source on resistance
VGS = 1.8 V, IDS = 0.1 A
96
135
m
VGS = 2.5 V, IDS = 0.4 A
73
92
VGS = 4.5 V, IDS = 0.4 A
63
76
gfs
Transconductance
VDS = 1.2 V, IDS = 0.4 A
4.3
S
DYNAMIC CHARACTERISTICS
Ciss
Input capacitance
VGS = 0 V, VDS = 6 V,
ƒ = 1 MHz
120
156
pF
Coss
Output capacitance
81
105
pF
Crss
Reverse transfer capacitance
9.6
12.5
pF
RG
Series gate resistance
16
Qg
Gate charge total (4.5 V)
VDS = 6 V, IDS = 0.4 A
0.91
1.2
nC
Qgd
Gate charge gate-to-drain
0.15
nC
Qgs
Gate charge gate-to-source
0.19
nC
Qg(th)
Gate charge at Vth
0.15
nC
Qoss
Output charge
VDS = 6 V, VGS = 0 V
0.81
nC
td(on)
Turnon delay time
VDS = 6 V, VGS = 4.5 V,
IDS = 0.4 A, RG = 2 Ω
4
ns
tr
Rise time
4
ns
td(off)
Turnoff delay time
11
ns
tf
Fall time
3
ns
DIODE CHARACTERISTICS
VSD
Diode forward voltage
ISD = 0.4 A, VGS = 0 V
0.71
1
V
Qrr
Reverse recovery charge
VDS= 6 V, IF = 0.4 A, di/dt = 100 A/μs
2.1
nC
trr
Reverse recovery time
8
ns
(1)
Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu.
(2)
Device mounted on FR4 material with minimum Cu mounting area.
5.2 Thermal Information
TA = 25°C (unless otherwise stated)
THERMAL METRIC
MIN
TYP
MAX
UNIT
RθJA
Junction-to-ambient thermal resistance(1)
90
°C/W
Junction-to-ambient thermal resistance(2)
255


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