SI3212 datasheet(11/122 Pages) ETC

No. de pieza	SI3212

Descripción Electrónicos	PROSLIC PROGRAMMABLE CMOS SLIC/CODEC WITH RINGING/BATTERY VOLTAGE GENERATION

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Si3210/Si3211/Si3212

Preliminary Rev. 1.11

11

Table 4. Linefeed Characteristics

(VDDA, VDDD = 3.13 to 5.25 V, TA = 0 to 70°C for K-Grade, –40 to 85°C for B-Grade)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Loop Resistance Range

RLOOP

See note.*

0

—

160

Ω

DC Loop Current Accuracy

ILIM = 29 mA, ETBA = 4 mA

–10

—

10

%

DC Open Circuit Voltage

Accuracy

Active Mode; VOC = 48 V,

VTIP – VRING

–4

—

4

V

DC Differential Output

Resistance

RDO

ILOOP < ILIM

—160

—

Ω

DC Open Circuit Voltage—

Ground Start

VOCTO

IRING<ILIM; VRING wrt ground

VOC = 48 V

–4

—

4

V

DC Output Resistance—

Ground Start

RROTO

IRING<ILIM; RING to ground

—

160

—

Ω

DC Output Resistance—

Ground Start

RTOTO

TIP to ground

150

—

k

Ω

Loop Closure/Ring Ground

Detect Threshold Accuracy

ITHR = 11.43 mA

–20

—

20

%

Ring Trip Threshold

Accuracy

RTHR = 1100 Ω

–20

—

20

%

Ring Trip Response Time

User Programmable Register 70

and Indirect Register 36

———

Ring Amplitude

VTR

5 REN load; sine wave;

RLOOP = 160 Ω, VBAT = –75 V

44

—

VRMS

Ring DC Offset

ROS

Programmable in Indirect

Register 19

0—

—

V

Trapezoidal Ring Crest

Factor Accuracy

Crest factor = 1.3

–.05

—

.05

Sinusoidal Ring Crest

Factor

RCF

1.35

—

1.45

Ringing Frequency Accuracy

f = 20 Hz

–1

—

1

%

Ringing Cadence Accuracy

Accuracy of ON/OFF Times

–50

—

50

msec

Calibration Time

↑CAL to ↓CAL Bit

—

600

msec

Power Alarm Threshold

Accuracy

At Power Threshold = 300 mW

–25

—

25

%

*Note:

DC resistance round trip; 160

Ω corresponds to 2 kft 26 gauge AWG.

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