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MTBA6C12H8 Datasheet(PDF) 8 Page - Cystech Electonics Corp. |
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MTBA6C12H8 Datasheet(HTML) 8 Page - Cystech Electonics Corp. |
8 / 14 page CYStech Electronics Corp. Spec. No. : C973H8 Issued Date : 2016.07.06 Revised Date : 2016.11.08 Page No. : 8/14 MTBA6C12H8 CYStek Product Specification Typical Characteristics(Cont.) : Q2(P-channel) Capacitance vs Drain-to-Source Voltage 10 100 1000 0 1020 30405060 Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=-250μA ID=-1mA -VDS, Drain-Source Voltage(V) Ciss C oss Crss Forward Transfer Admittance vs Drain Current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 -ID, Drain Current(A) VDS=-10V Pulsed TA=25°C Gate Charge Characteristics 0 2 4 6 8 10 0246 8 10 12 14 Qg, Total Gate Charge(nC) ID=-1.5A VDS=-96V VDS=-60V Maximum Safe Operating Area 0.01 0.1 1 10 100 0.1 1 10 100 1000 -VDS, Drain-Source Voltage(V) DC 10ms 100ms 100 μs TA=25°C, Tj=150°C, VGS=-10V RθJA=50°C/W, Single Pulse 1s 1ms Maximum Drain Current vs Junction Temperature 0 0.5 1 1.5 2 2.5 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) TA=25°C, Tj(max)=150°C,VGS=-10V RθJA=50°C/W |
Número de pieza similar - MTBA6C12H8_16 |
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Descripción similar - MTBA6C12H8_16 |
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