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MTBA6C12H8 Datasheet(PDF) 8 Page - Cystech Electonics Corp.

No. de pieza MTBA6C12H8
Descripción Electrónicos  N- AND P-Channel Enhancement Mode MOSFET
Download  14 Pages
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Fabricante Electrónico  CYSTEKEC [Cystech Electonics Corp.]
Página de inicio  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTBA6C12H8 Datasheet(HTML) 8 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C973H8
Issued Date : 2016.07.06
Revised Date : 2016.11.08
Page No. : 8/14
MTBA6C12H8
CYStek Product Specification
Typical Characteristics(Cont.) : Q2(P-channel)
Capacitance vs Drain-to-Source Voltage
10
100
1000
0
1020
30405060
Threshold Voltage vs Junction Tempearture
0.4
0.6
0.8
1
1.2
1.4
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
ID=-250μA
ID=-1mA
-VDS, Drain-Source Voltage(V)
Ciss
C oss
Crss
Forward Transfer Admittance vs Drain Current
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
-ID, Drain Current(A)
VDS=-10V
Pulsed
TA=25°C
Gate Charge Characteristics
0
2
4
6
8
10
0246
8
10
12
14
Qg, Total Gate Charge(nC)
ID=-1.5A
VDS=-96V
VDS=-60V
Maximum Safe Operating Area
0.01
0.1
1
10
100
0.1
1
10
100
1000
-VDS, Drain-Source Voltage(V)
DC
10ms
100ms
100
μs
TA=25°C, Tj=150°C, VGS=-10V
RθJA=50°C/W, Single Pulse
1s
1ms
Maximum Drain Current vs Junction Temperature
0
0.5
1
1.5
2
2.5
25
50
75
100
125
150
175
Tj, Junction Temperature(°C)
TA=25°C, Tj(max)=150°C,VGS=-10V
RθJA=50°C/W


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