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MC100LVEP111MNRG Datasheet(PDF) 8 Page - ON Semiconductor |
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MC100LVEP111MNRG Datasheet(HTML) 8 Page - ON Semiconductor |
8 / 14 page MC100LVEP111 www.onsemi.com 8 Figure 5. Typical MC100LVEP111 Phase Noise Plot at fCarrier = 156.25 MHz, VCC = 3.3 V, 255C The above phase noise data was captured using Agilent E5052A/B. The data displays the input phase noise and output phase noise used to calculate the additive phase jitter at a specified integration range. The additive RMS phase jitter contributed by the device (integrated between 12 kHz and 20 MHz) is 53 fs. The additive RMS phase jitter performance of the fanout buffer is highly dependent on the phase noise of the input source. To obtain the most precise additive phase noise measurement, it is vital that the source phase noise be notably lower than that of the DUT. If the phase noise of the source is greater than the noise floor of the device under test, the source noise will dominate the additive phase jitter calculation and lead to an incorrect negative result for the additive phase noise within the integration range. The Figure above is a good example of the MC100LVEP111 source generator phase noise having a significantly lower floor than the DUT and results in an additive phase jitter of 53 fs. Additive RMS phase jitter = √RMS phase jitter of output2 − RMS phase jitter of input2 53 fs + 138.18 fs2 * 127.59 fs2 Figure 5 was created with measured data from Agilent−E5052B Signal Source Analyzer using ON Semiconductor Phase Noise Explorer web tool. This free application enables an interactive environment for advanced phase noise and jitter analysis of timing devices and clock tree designs. To see the performance of MC100LVEP111 beyond conditions outlined in this datasheet, please visit the ON Semiconductor Green Point Design Tools homepage. |
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