DMN3730U datasheet(2/3 Pages) ZPSEMI

No. de pieza	DMN3730U

Descripción Electrónicos	30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23

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Fabricante Electrónico	ZPSEMI [ZP Semiconductor]

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Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

30

V

Gate-Source Voltage

VGSS

±8

V

Continuous Drain Current

Steady

State

TA = 25°C (Note 5)

TA = 85°C (Note 5)

TA = 25°C (Note 4)

ID

0.94

0.68

0.75

A

Pulsed Drain Current (Note 6)

IDM

10

A

Thermal Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Power Dissipation

(Note 4)

PD

0.45

W

(Note 5)

0.71

W

Thermal Resistance, Junction to Ambient

(Note 4)

RθJA

275

°C/W

(Note 5)

177

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Notes:

2. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout

3. Device mounted on 25mm X 25mm square copper plate with FR-4 substrate PC board, 2oz copper

4. Device mounted on minimum recommended pad layout test board, 10

μs pulse duty cycle = 1%.

DMN3730U

30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23

2 of 3

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