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DMN3730U Datasheet(PDF) 2 Page - ZP Semiconductor |
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DMN3730U Datasheet(HTML) 2 Page - ZP Semiconductor |
2 / 3 page Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±8 V Continuous Drain Current Steady State TA = 25°C (Note 5) TA = 85°C (Note 5) TA = 25°C (Note 4) ID 0.94 0.68 0.75 A Pulsed Drain Current (Note 6) IDM 10 A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Power Dissipation (Note 4) PD 0.45 W (Note 5) 0.71 W Thermal Resistance, Junction to Ambient (Note 4) RθJA 275 °C/W (Note 5) 177 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 2. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout 3. Device mounted on 25mm X 25mm square copper plate with FR-4 substrate PC board, 2oz copper 4. Device mounted on minimum recommended pad layout test board, 10 μs pulse duty cycle = 1%. DMN3730U 30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 2 of 3 sales@zpsemi.com www.zpsemi.com |
Número de pieza similar - DMN3730U |
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Descripción similar - DMN3730U |
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