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K6T4016V3C Datasheet(PDF) 4 Page - Samsung semiconductor |
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K6T4016V3C Datasheet(HTML) 4 Page - Samsung semiconductor |
4 / 9 page K6T4016V3C, K6T4016U3C Family CMOS SRAM Revision 2.01 October 2001 4 RECOMMENDED DC OPERATING CONDITIONS1) Note: 1. Commercial Product: TA=0 to 70 °C, otherwise specified Industrial Product: TA=-40 to 85 °C, otherwise specified 2. Overshoot: VCC+2.0V in case of pulse width ≤ 30ns 3. Undershoot: -2.0V in case of pulse width ≤ 30ns 4. Overshoot and undershoot are sampled, not 100% tested. Item Symbol Product Min Typ Max Unit Supply voltage Vcc K6T4016V3C Family K6T4016U3C Family 3.0 2.7 3.3 3.0 3.6 3.3 V Ground Vss All Family 0 0 0 V Input high voltage VIH K6T4016V3C, K6T4016U3C Family 2.2 - Vcc+0.32) V Input low voltage VIL K6T4016V3C, K6T4016U3C Family -0.33) - 0.6 V CAPACITANCE1) (f=1MHz, TA=25 °C) 1. Capacitance is sampled, not 100% tested Item Symbol Test Condition Min Max Unit Input capacitance CIN VIN=0V - 8 pF Input/Output capacitance CIO VIO=0V - 10 pF DC AND OPERATING CHARACTERISTICS 1. Industrial product = 20 µA 2. Cycle time = 70ns Item Symbol Test Conditions Min Typ Max Unit Input leakage current ILI VIL=Vss to Vcc -1 - 1 µA Output leakage current ILO CS=VIH or OE=VIH or WE=VIL VIO=Vss to Vcc -1 - 1 µA Operating power supply current ICC IIO=0mA, CS=VIL, VIN=VIL or VIH, Read - - 4 mA Average operating current ICC1 Cycle time=1 µs, 100% duty, IIO=0mA CS≤0.2V, VIN ≤0.2V or VIN≥Vcc-0.2V - - 6 mA ICC2 Cycle time=Min2), 100% duty, IIO=0mA, CS=VIL, VIN=VIH or VIL - - 45 mA Output low voltage VOL IOL=2.1mA - - 0.4 V Output high voltage VOH IOH=-1.0mA 2.4 - - V Standby Current(TTL) ISB CS=VIH, Other inputs=VIL or VIH - - 0.3 mA Standby Current(CMOS) ISB1 CS ≥Vcc-0.2V, Other inputs=0~Vcc - - 151) µA |
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