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IRLML6302GTRPBF Datasheet(PDF) 2 Page - ZP Semiconductor

No. de pieza IRLML6302GTRPBF
Descripción Electrónicos  HEXFETPower MOSFET
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Fabricante Electrónico  ZPSEMI [ZP Semiconductor]
Página de inicio  http://zpsemi.com/
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IRLML6302GTRPBF Datasheet(HTML) 2 Page - ZP Semiconductor

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Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-20 ––– –––
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– -4.9 ––– mV/°C Reference to 25°C, ID = -1mA
––– ––– 0.60
VGS = -4.5V, ID = -0.61A ƒ
––– ––– 0.90
VGS = -2.7V, ID = -0.31A ƒ
VGS(th)
Gate Threshold Voltage
-0.70 ––– -1.5
V
VDS = VGS, ID = -250µA
gfs
Forward Transconductance
0.56 ––– –––
S
VDS = -10V, ID = -0.31A
––– ––– -1.0
VDS = -16V, VGS = 0V
––– ––– -25
VDS = -16V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
––– ––– -100
VGS = -12V
Gate-to-Source Reverse Leakage
––– ––– 100
VGS = 12V
Qg
Total Gate Charge
––– 2.4
3.6
ID = -0.61A
Qgs
Gate-to-Source Charge
––– 0.56 0.84
nC
VDS = -16V
Qgd
Gate-to-Drain ("Miller") Charge
––– 1.0
1.5
VGS = -4.5V, See Fig. 6 and 9 ƒ
td(on)
Turn-On Delay Time
–––
13
–––
VDD = -10V
tr
Rise Time
–––
18
–––
ID = -0.61A
td(off)
Turn-Off Delay Time
–––
22
–––
RG = 6.2Ω
tf
Fall Time
–––
22
–––
RD = 16Ω, See Fig. 10 ƒ
Ciss
Input Capacitance
–––
97
–––
VGS = 0V
Coss
Output Capacitance
–––
53
–––
pF
VDS = -15V
Crss
Reverse Transfer Capacitance
–––
28
–––
ƒ = 1.0MHz, See Fig. 5
Ω
µA
nA
IGSS
IDSS
Drain-to-Source Leakage Current
RDS(ON)
Static Drain-to-Source On-Resistance
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Notes:
 Repetitive rating; pulse width
limited by max. junction temperature. ( See fig. 11 )
‚ ISD ≤ -0.61A, di/dt ≤ 76A/µs, VDD≤V(BR)DSS,
TJ ≤ 150°C
ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
„ Surface mounted on FR-4 board, t ≤ 5sec.
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

p-n junction diode.
VSD
Diode Forward Voltage
––– ––– -1.2
V
TJ = 25°C, IS = -0.61A, VGS = 0V
„
trr
Reverse Recovery Time
–––
35
53
ns
TJ = 25°C, IF = -0.61A
Qrr
Reverse Recovery Charge
–––
26
39
nC
di/dt = -100A/µs
„
Source-Drain Ratings and Characteristics
A
S
D
G
––– ––– -4.9
––– ––– -0.54
ns
IRLML6302PbF
HEXFET® Power MOSFET
2 of 2
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