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LM2427T Datasheet(PDF) 2 Page - National Semiconductor (TI) |
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LM2427T Datasheet(HTML) 2 Page - National Semiconductor (TI) |
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2 / 6 page  Absolute Maximum Ratings If MilitaryAerospace specified devices are required please contact the National Semiconductor Sales OfficeDistributors for availability and specifications Supply Voltage Vaa85V Safe Operating Power Consumption 14W Storage Temperature Range TSTG b 25 Cto a100 C Operating Temperature Range TCASE b 20 Cto a90 C Lead Temperature (Soldering 10 sec) 300 C ESD Tolerance TBD Electrical Characteristics Vae 80V RG e 430X C1 e 47 pF CL e 8 pF 50 VPP output swing with 40V DC offset See Figure 1 TCASE e 25 C unless otherwise noted Symbol Parameter Conditions LM2427 Units Min Typical Max ICC Supply Current (per Amplifier) No Input or Output Load 24 30 mA VINDC Input Offset Voltage 14 16 18 V VOUTDC Output Offset Voltage 34 40 46 V tR Rise Time 10% to 90% (Note 1) 35 ns tF Fall Time 90% to 10% (Note 1) 35 ns AV Voltage Gain b 11 b 13 b 14 VV LE Linearity Error VOUT from a10V to a70V (Note 2) 5 % D AV Gain Matching (Note 3) 02 dB Note 1 Input signal tr tf k 15 ns fin e 1 MHz Note 2 Linearity error is defined as The variation in small signal gain from a20V to a70V output with a 100 mVAC 1 MHz input signal Note 3 Calculated value from voltage gain test on each channel Typical Performance Characteristics Typical Test Circuit (One Section) TLH11967 – 3 Note CL total load capacltance includes all parasitic capacitances FIGURE 1 Test Circuit (One Section) This test circuit is used for both characteristic plots Typical Rise Time vs Capacitive Loading TLH11967 – 10 Typical Fall Time vs Capacitive Loading TLH11967 – 5 2 |
Número de pieza similar - LM2427T |
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Descripción similar - LM2427T |
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