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CAT5261YI-50-T2 Datasheet(PDF) 7 Page - ON Semiconductor |
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CAT5261YI-50-T2 Datasheet(HTML) 7 Page - ON Semiconductor |
7 / 14 page CAT5261 http://onsemi.com 7 Table 11. RELIABILITY CHARACTERISTICS Symbol Parameter Reference Test Method Min Max Units NEND (Note 11) Endurance MIL−STD−883, Test Method 1033 1,000,000 Cycles/Byte TDR (Note 11) Data Retention MIL−STD−883, Test Method 1008 100 Years VZAP (Note 11) ESD Susceptibility MIL−STD−883, Test Method 3015 2000 V ILTH (Note 11) Latch-up JEDEC Standard 17 100 mA 9. This parameter is tested initially and after a design or process change that affects the parameter. 10.tPUR and tPUW are delays required from the time VCC is stable until the specified operation can be initiated. 11. This parameter is tested initially and after a design or process change that affects the parameter. VALID IN HI−Z HI−Z SCK SI SO Figure 2. Synchronous Data Timing tCS tCSH tDIS tHO tV tRI tFI tWL tWH tH tSU tCSS VOH VOL VIH VIL VIH VIL CS VIH VIL NOTE: Dashed Line = mode (1, 1) Figure 3. HOLD Timing SCK SO HIGH IMPEDANCE tCD tHD tLZ tHZ tHD tCD CS HOLD |
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