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CAT5269WI00 Datasheet(PDF) 6 Page - ON Semiconductor

No. de pieza CAT5269WI00
Descripción Electrónicos  Dual Digital Potentiometer (POT)
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Fabricante Electrónico  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
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CAT5269WI00 Datasheet(HTML) 6 Page - ON Semiconductor

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Table 8. POWER UP TIMING (Notes 9, 10)
Symbol
Parameter
Max
Units
tPUR
Power-up to Read Operation
1
ms
tPUW
Power-up to Write Operation
1
ms
Table 9. WIPER TIMING
Symbol
Parameter
Max
Units
tWRPO
Wiper Response Time After Power Supply Stable
10
ms
tWRL
Wiper Response Time After Instruction Issued
10
ms
Table 10. WRITE CYCLE LIMITS (Note 11)
Symbol
Parameter
Max
Units
tWR
Write Cycle Time
5
ms
Table 11. RELIABILITY CHARACTERISTICS
Symbol
Parameter
Reference Test Method
Min
Max
Units
NEND (Note 9)
Endurance
MIL−STD−883, Test Method 1033
1,000,000
Cycles/Byte
TDR (Note 9)
Data Retention
MIL−STD−883, Test Method 1008
100
Years
VZAP (Note 9)
ESD Susceptibility
MIL−STD−883, Test Method 3015
2000
V
ILTH (Note 9)
Latch-up
JEDEC Standard 17
100
mA
9. This parameter is tested initially and after a design or process change that affects the parameter.
10.tPUR and tPUW are delays required from the time VCC is stable until the specified operation can be initiated.
11. The write cycle is the time from a valid stop condition of a write sequence to the end of the internal program/erase cycle. During the write
cycle, the bus interface circuits are disabled, SDA is allowed to remain high, and the device does not respond to its slave address.
Figure 2. Bus Timing
SCL
SDA IN
SDA OUT
tF
tSU:STA
tHD:STA
tLOW
tAA
tDH
tHD:DAT
tSU:STO
tBUF
tR
tSU:DAT
tLOW
tHIGH


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