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SDURF30100CTR Datasheet(PDF) 3 Page - Sangdest Microelectronic (Nanjing) Co., Ltd |
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SDURF30100CTR Datasheet(HTML) 3 Page - Sangdest Microelectronic (Nanjing) Co., Ltd |
3 / 4 page Technical Data Green Products Data Sheet N1340, Rev. A • China - Germany - Korea - Singapore - United States • • http://www.smc-diodes.com - sales@ smc-diodes.com • SDURF30100CT(CTR) Electrical Characteristics: * Pulse width < 300 µs, duty cycle < 2% Thermal-Mechanical Specifications: Characteristics Symbol Condition Specification Units Junction Temperature TJ - -55 to +150 °C Storage Temperature Tstg - -55 to +150 °C Typical Thermal Resistance Junction to Case RθJC DC operation 5.0 °C/W Approximate Weight wt - 2 g Case Style ITO-220AB Characteristics Symbol Condition Max. Units Forward Voltage Drop(Per leg)* VF1 @10A, Pulse, TJ = 25°C 2.5 V VF2 @10A, Pulse, TJ = 125°C 2.0 V Reverse Current(Per leg)* IR1 @VR = rated VR TJ = 25°C 250 μA IR2 @VR = rated VR TJ = 125°C 7 mA Reverse Recovery Time trr1 IF=500mA, IR=1A,and Irm=250mA 100 ns |
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