K6F4016U6G datasheet(4/9 Pages) SAMSUNG

No. de pieza	K6F4016U6G

Descripción Electrónicos	256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM

Download	9 Pages

Scroll/Zoom	100%

Fabricante Electrónico	SAMSUNG [Samsung semiconductor]

Página de inicio	http://www.samsung.com/Products/Semiconductor

Logo

4 / 9 page

Revision 0.0

CMOS SRAM

June 2003

K6F4016U6G Family

- 4 -

Preliminary

DC AND OPERATING CHARACTERISTICS

1. Typical values are measured at VCC=3.0V, TA=25

°C and not 100% tested.

Item

Symbol

Test Conditions

Min

Typ1)

Max

Unit

Input leakage current

ILI

VIN=Vss to Vcc

-1

-

1

µA

Output leakage current

ILO

CS1=VIH or CS2=VIL or OE=VIH or WE=VIL or LB=UB=VIH,

VIO=Vss to Vcc

-1

-

1

µA

Average operating current

ICC1

Cycle time=1

µs, 100%duty, IIO=0mA, CS1≤0.2V, LB≤0.2V

or/and UB

≤0.2V, CS2≥Vcc-0.2V, VIN≤0.2V or VIN≥VCC-0.2V

-

4

mA

ICC2

Cycle time=Min, IIO=0mA, 100% duty, CS1=VIL,

CS2=VIH, LB=VIL or/and UB=VIL, VIN=VIL or VIH

70ns

-

22

mA

55ns

-

27

Output low voltage

VOL

IOL = 2.1mA

-

0.4

V

Output high voltage

VOH

IOH = -1.0mA

2.4

-

V

Standby Current (CMOS)

ISB1

Other input =0~Vcc

1) CS1

≥Vcc-0.2V, CS2≥Vcc-0.2V(CS1 controlled) or

2) 0V

≤CS2≤0.2V(CS2 controlled)

-

3

10

µA

RECOMMENDED DC OPERATING CONDITIONS1)

Note:

1. Industrial Product: TA=-40 to 85

°C, otherwise specified.

2. Overshoot: Vcc+2.0V in case of pulse width

≤20ns.

3. Undershoot: -2.0V in case of pulse width

≤20ns.

4. Overshoot and undershoot are sampled, not 100% tested.

Item

Symbol

Min

Typ

Max

Unit

Supply voltage

Vcc

2.7

3.0

3.3

V

Ground

Vss

0

V

Input high voltage

VIH

2.2

-

Vcc+0.32)

V

Input low voltage

VIL

-0.33)

-

0.6

V

CAPACITANCE1) (f=1MHz, TA=25

°C)

1. Capacitance is sampled, not 100% tested

Item

Symbol

Test Condition

Min

Max

Unit

Input capacitance

CIN

VIN=0V

-

8

pF

Input/Output capacitance

CIO

VIO=0V

-

10

pF

Número de pieza similar - K6F4016U6G

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Samsung semiconductor	K6F4016U4G	173Kb / 9P	256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM
	K6F4016U4G-EF55	173Kb / 9P	256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM
	K6F4016U4G-EF70	173Kb / 9P	256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM

More results

Descripción similar - K6F4016U6G

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Samsung semiconductor	K6F4016U4G	173Kb / 9P	256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM
	K6X4016C3F	131Kb / 9P	256Kx16 bit Low Power full CMOS Static RAM
	K6X4016T3F	138Kb / 9P	256Kx16 bit Low Power and Low Voltage CMOS Static RAM
	K6T4016V3C	154Kb / 9P	256Kx16 bit Low Power and Low Voltage CMOS Static RAM
Integrated Circuit Solu...	IC62LV25616L	126Kb / 11P	256Kx16 bit Low Voltage and Ultra Low Power CMOS Static RAM
Samsung semiconductor	K6T4016C3B	149Kb / 9P	256Kx16 bit Low Power CMOS Static RAM
	KM6164000B	151Kb / 9P	256Kx16 bit Low Power CMOS Static RAM
	K6F2008V2E	134Kb / 9P	256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
	K6F2008S2E	130Kb / 9P	256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
	DS_K6F2008U2E	130Kb / 10P	256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM

More results

K6F4016U6G Datasheet(PDF) 4 Page - Samsung semiconductor

K6F4016U6G Datasheet(HTML) 4 Page - Samsung semiconductor

Número de pieza similar - K6F4016U6G

Descripción similar - K6F4016U6G

Html Pages

1 2 3 4 5 6 7 8 9

Datasheet Descarga

Enlace URL