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BZW04P26 Datasheet(Hoja de datos) 2 Page - MDE Semiconductor, Inc.

No. de Pieza. BZW04P26
Descripción  GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
Descarga  4 Pages
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Fabricante  MDE [MDE Semiconductor, Inc.]
Página de inicio  http://www.mdesemiconductor.com
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 2 page
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11/13/2013
Ratings and
Characteristic Curves(T
A=25℃ unless otherwise noted)
MDE Semiconductor, Inc.
78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel: 760-564-8656 • Fax: 760-564-2414
1-800-831-4881 Email: sales@mdesemicondutor.com Web: www.mdesemiconductor.com
RATINGS AND CHARACTERISTIC CURVES BZW04 SERIES
0
0
Fig.2 - Pulse Derating Curve
T
A - Ambient Temperature (°C)
0.1
1
10
100
Fig. 1 - Peak Pulse Power
10m
Non-repetitive Pulse
Waveform shown in
Fig. 3
0.1μ
1.0μ
10μs
100μs
1.0m
td - Pulse Width
10
100
1000
0
0.2
0.4
0.6
0.8
1
1.2
Fig.6 - Maximum Non-Repetitive Forward
Surge Current Uni-Directional Only
200
T
J = TJ max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
50
Number of Cycles at 60 Hz
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
Measured at Devices
Stand-off Voltage,V
WM
T
A = 25°C
V
(BR) - Breakdown Voltage (V)
Fig.7 - Typical Reverse Leakage Characteristics
3.0
4.0
150
0
1.0
2.0
tr = 10μsec.
Peak Value I
PPM
Half Value-
I
PPM
TJ = 25°C
Pulse Width(td)is defined
as the point where the
peak current decays to
50% of I
PPM
10/1000μsec.Waveform
as defined by R.E.A.
td
Fig.3 - Pulse Waveform
3
0
4.0
50
100
t - Time(ms)
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
Fig. 8 - Typ.Transient Thermal Impedance
t
p-Pulse Duration (sec)
0.00
0.13
0.25
0.38
0.50
0.63
0.75
0.88
1.00
0
0.2
0.4
0.6
0.8
1
1.2
0
60 HZ Resistive or
Inductive Load
L=0.375" (9.5mm)
Lead Lengths
1.6x1.6x.040"
(40x40x1mm)
Copper Heat Sinks
T
L - Lead Temperature
Fig.5 - steady State Power Derating
10
100
1000
10000
1.0
100
200
Measured at
Stand-Off
Voltage, V
WM
T
J = 25°C
f = 1.0MH
Z
Vsig = 50mVp-p
Measured at Zero
Bias
Fig.4 - Typ.Junction Capacitance Uni-Directional
VWM - Reverse Stand-Off Voltage (V)




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