CAT93C66VI-G datasheet(2/13 Pages) ONSEMI

No. de pieza	CAT93C66VI-G

Descripción Electrónicos	4 kb Microwire Serial CMOS EEPROM

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Fabricante Electrónico	ONSEMI [ON Semiconductor]

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CAT93C66, CAT93W66

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Table 1. PIN FUNCTION

Pin Name

Function

Pin Name

Function

CS

Chip Select

VCC

Power Supply

SK

Clock Input

GND

Ground

DI

Serial Data Input

ORG (Note 1)

Memory Organization

DO

Serial Data Output

NC

No Connection

1. ORG Pin available for the CAT93C66 only.

Table 2. ABSOLUTE MAXIMUM RATINGS

Parameters

Ratings

Units

Storage Temperature

−65 to +150

°C

Voltage on Any Pin with Respect to Ground (Note 2)

−0.5 to +6.5

V

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

2. The DC input voltage on any pin should not be lower than −0.5 V or higher than VCC + 0.5 V. During transitions, the voltage on any pin may

undershoot to no less than −1.5 V or overshoot to no more than VCC + 1.5 V, for periods of less than 20 ns.

Table 3. RELIABILITY CHARACTERISTICS (Note 3)

Symbol

Parameter

Min

Units

NEND (Note 4)

Endurance

1,000,000

Program / Erase Cycles

TDR

Data Retention

100

Years

3. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100

and JEDEC test methods.

4. Block Mode, VCC = 5 V, 25°C.

Table 4. D.C. OPERATING CHARACTERISTICS

(VCC = +1.8 V to +5.5 V, TA = −40°C to +125°C unless otherwise specified.)

Symbol

Parameter

Test Conditions

Min

Max

Units

ICC1

Power Supply Current

(Write)

fSK = 1 MHz, VCC = 5.0 V

1

mA

ICC2

Power Supply Current

(Read)

fSK = 1 MHz, VCC = 5.0 V

500

mA

ISB1

Power Supply Current

(Standby) (x8 Mode)

VIN = GND or VCC,

CS = GND ORG = GND

TA = −40°C to +85°C

2

mA

TA = −40°C to +125°C

4

ISB2

Power Supply Current

(Standby) (x16 Mode)

VIN = GND or VCC, CS = GND

ORG = Float or VCC

TA = −40°C to +85°C

1

mA

TA = −40°C to +125°C

2

ILI

Input Leakage Current

VIN = GND to VCC

TA = −40°C to +85°C

1

mA

TA = −40°C to +125°C

2

ILO

Output Leakage Current

VOUT = GND to VCC,

CS = GND

TA = −40°C to +85°C

1

mA

TA = −40°C to +125°C

2

VIL1

Input Low Voltage

4.5 V

≤ VCC < 5.5 V

−0.1

0.8

V

VIH1

Input High Voltage

4.5 V

≤ VCC < 5.5 V

2

VCC + 1

V

VIL2

Input Low Voltage

1.8 V

≤ VCC < 4.5 V

0

VCC x 0.2

V

VIH2

Input High Voltage

1.8 V

≤ VCC < 4.5 V

VCC x 0.7

VCC + 1

V

VOL1

Output Low Voltage

4.5 V

≤ VCC < 5.5 V, IOL = 2.1 mA

0.4

V

VOH1

Output High Voltage

4.5 V

≤ VCC < 5.5 V, IOH = −400 mA

2.4

V

VOL2

Output Low Voltage

1.8 V

≤ VCC < 4.5 V, IOL = 1 mA

0.2

V

VOH2

Output High Voltage

1.8 V

≤ VCC < 4.5 V, IOH = −100 mA

VCC − 0.2

V

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

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