SI3585DV datasheet(6/8 Pages) VISHAY

No. de pieza	SI3585DV

Descripción Electrónicos	N- and P-Channel 20-V (D-S) MOSFET

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Document Number: 71184

S09-2275-Rev. D, 02-Nov-09

Vishay Siliconix

Si3585DV

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Gate Charge

Source-Drain Diode Forward Voltage

Threshold Voltage

0.0

0.9

1.8

2.7

3.6

4.5

0.0

0.6

1.2

1.8

2.4

3.0

VDS = 10 V

ID = 2.4 A

Qg - Total Gate Charge (nC)

1.2

1.5

0.1

1

10

0

0.3

0.6

0.9

TJ = 25 °C

TJ = 150 °C

VSD - Source-to-Drain Voltage (V)

- 0.4

- 0.2

0.0

0.2

0.4

0.6

- 50

- 25

0

25

50

75

100

125

150

ID = 250 µA

TJ - Temperature (°C)

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.4

0.6

0.8

1.0

1.2

1.4

1.8

1.6

- 50

- 25

0

25

50

75

100

125

150

VGS = 10 V

ID = 2.4 A

TJ - Junction Temperature (°C)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0

1234

5

VGS - Gate-to-Source Voltage (V)

ID = 1.8 A

ID = 1.2 A

0.01

0

1

6

8

2

4

10

30

0.1

Time (s)

Número de pieza similar - SI3585DV

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Vaishali Semiconductor	SI3585DV	67Kb / 7P	N- and P-Channel 20-V (D-S) MOSFET
Vishay Siliconix	SI3585DV	132Kb / 8P	N- and P-Channel 20-V (D-S) MOSFET 01-Jan-2022
VBsemi Electronics Co.,...	SI3585DV-T1-E3	597Kb / 10P	N- and P-Channel 20V (D-S) MOSFET
VBsemi Electronics Co.,...	SI3585DV-T1-GE3	1Mb / 10P	N- and P-Channel V (D-S) MOSFET
Vishay Siliconix	SI3585DV	132Kb / 8P	N- and P-Channel 20-V (D-S) MOSFET 01-Jan-2022

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Descripción similar - SI3585DV

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VBsemi Electronics Co.,...	AO7600	1Mb / 9P	N- and P- Channel 20 V (D-S) MOSFET

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