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SI4563DY Datasheet(PDF) 3 Page - Vishay Siliconix |
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SI4563DY Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 12 page Document Number: 73513 S09-0393-Rev. C, 09-Mar-09 www.vishay.com 3 Vishay Siliconix Si4563DY Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ.a Max. Unit Dynamica Turn-On Delay Time td(on) N-Channel VDD = 20 V, RL = 4 Ω ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω P-Channel VDD = - 20 V, RL = 4 Ω ID ≅ - 5 A, VGEN = - 10 V, Rg = 1 Ω N-Ch 15 23 ns P-Ch 13 20 Rise Time tr N-Ch 20 30 P-Ch 16 25 Turn-Off Delay Time td(off) N-Ch 56 85 P-Ch 75 115 Fall Time tf N-Ch 10 15 P-Ch 68 105 Turn-On Delay Time td(on) N-Channel VDD = 20 V, RL = 4 Ω ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω P-Channel VDD = - 20 V, RL = 4 Ω ID ≅ - 5 A, VGEN = - 4.5 V, Rg = 16 Ω N-Ch 88 135 P-Ch 33 50 Rise Time tr N-Ch 117 180 P-Ch 93 140 Turn-Off Delay Time td(off) N-Ch 62 95 P-Ch 80 120 Fall Time tf N-Ch 19 30 P-Ch 69 105 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C N-Ch 2.7 A P-Ch - 2.7 Pulse Diode Forward Currenta ISM N-Ch 20 P-Ch - 20 Body Diode Voltage VSD IS = 1.5 A N-Ch 0.69 1.2 V IS = - 1.6 A P-Ch - 0.72 - 1.2 Body Diode Reverse Recovery Time trr N-Channel IF = 2 A, dI/dt = 100 A/µs, TJ = 25 °C P-Channel IF = - 2 A, dI/dt = - 100 A/µs, TJ = 25 °C N-Ch 62 95 ns P-Ch 49 75 Body Diode Reverse Recovery Charge Qrr N-Ch 62 95 nC P-Ch 42 65 Reverse Recovery Fall Time ta N-Ch 26 ns P-Ch 19 Reverse Recovery Rise Time tb N-Ch 36 P-Ch 30 |
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