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LM2685 Datasheet(PDF) 3 Page - National Semiconductor (TI) |
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LM2685 Datasheet(HTML) 3 Page - National Semiconductor (TI) |
3 / 9 page Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Supply Voltage (V IN to GND or GND to V NEG) 6.8V SDN, SDP, CE (GND − 0.3V) to (V IN + 0.3V) V 05 Continuous Output Current 80mA V 05 Short-Circuit Duration to GND (Note 2) Indefinite Continuous Power Dissipation (T A = 25˚C) (Note 3) 600mW T JMAX (Note 3) 150˚C θ JA (Note 3) 140˚C/W Operating Ambient Temp. Range −40˚C to 85˚C Operating Junction Temp. Range −40˚C to 125˚C Storage Temp. Range −65˚C to 150˚C Lead Temp. (Soldering, 10 sec.) 300˚C ESD Rating (Note 4) 2kV Electrical Characteristics Limits with standard typeface apply for T J = 25˚C, and limits in boldface type apply over the full temperature range. Unless otherwise specified V IN = 3.6V, C1 =C2 =C3 =C5 = 2.2µF. C4 = 4.7µF (Note 5) Symbol Parameter Conditions Min Typ Max Units V + Supply Voltage 2.85 6.5 V I Q Supply Current No Load 800 1600 µA No Load, V IN = 6.5V 300 600 I SD Shutdown Supply Current V IN = 6.5V 6 30 µA V SD Shutdown Pin Input Voltage for CE, SDP, SDN Logic Input High @ 6.5V 2.4 V Logic Input Low @ 6.5V 0.8 I L (+5V) Output Current at V 05 2.85V < V IN < 6.5V 50 mA R O (−5V) Output Resistance at V NEG I L = 15mA (Note 6) 20 40 Ω F SW Switch Frequency 85 130 180 kHz P EFF Average Power Efficiency at V 05 2.85V ≤ V IN ≤ 6.5V I L = 25mA to GND 82 % V 05 Output Regulation 1mA < I L < 50mA, VIN = 6.5V (Note 7) 4.848 5.05 5.252 V 1mA < I L < 50mA, VIN = 6.5V (Note 7) 4.797 5.05 5.303 G LINE Line Regulation 2.85V < V IN < 3.6V 0.25 %/V 3.6V < V IN < 6.5V 0.05 G LOAD Load Regulation 1mA < I L < 50mA, VIN = 6.5V 0.3 1.0 % R SW Series Switch Resistance V NEG to V NSW V IN > 2.85V 1.5 Ω V 05 to VPSW 5.0 Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is in- tended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. Note 2: V05 may be shorted to GND without damage. However, shorting VNEG to V05 may damage the device and must be avoided. Also, for temperature above 85˚C, V05 must not be shorted to GND or device may be damaged. Note 3: The maximum allowable power dissipation is calculated by using PDMAX =(TJMAX —TA)/θJA, where TJMAX is the maximum junction temperature, TA is the ambient temperature and θJA is the junction-to-ambient thermal resistance of the specified package. Note 4: The human body model is a 100 pF capacitor discharged through a 1.5k Ω resistor into each pin. Note 5: In the typical operating circuit, capacitors C1 and C2 are 2.2µF, 0.3Ω maximum ESR capacitors. Capacitors with higher ESR will increase output resistance, reduce output voltage and efficiency. Note 6: Specified output resistance includes internal switch resistance and ESR of capacitors. See the Detailed Device Description section. Note 7: The 50 mA maximum current assumes no current is drawn from VDBL pin. See Voltage Doubler section in the Detailed Device Description. www.national.com 3 |
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