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STD11N60M2-EP Datasheet(PDF) 1 Page - STMicroelectronics |
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STD11N60M2-EP Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 16 page April 2016 DocID027667 Rev 1 1/16 This is information on a product in full production. www.st.com STD11N60M2-EP N- channel 600 V, 0.550 Ω typ., 7.5 A MDmesh™ M2 EP Power MOSFET in a DPAK package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID STD11N60M2-EP 600 V 0.595 Ω 7.5 A Extremely low gate charge Excellent output capacitance (COSS) profile Very low turn-off switching losses 100% avalanche tested Zener-protected Applications Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 EP enhanced performance technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converters. Table 1: Device summary Order code Marking Package Packaging STD11N60M2-EP 11N60M2EP DPAK Tape and reel D(2, TAB) G(1) S(3) AM01476v1_tab |
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