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STE139N65M5 Datasheet(PDF) 5 Page - STMicroelectronics

No. de Pieza. STE139N65M5
Descripción  N-channel 650 V, 0.014 (ohm) typ., 130 A, MDmesh V Power MOSFET in a ISOTOP package
Descarga  13 Pages
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Fabricante  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
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STE139N65M5 Datasheet(HTML) 5 Page - STMicroelectronics

 
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STE139N65M5
Electrical characteristics
13
Table 6. Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(v)
Voltage delay time
VDD = 400 V, ID = 80 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 16)
(see Figure 19)
-295
-
ns
tr(v)
Voltage rise time
-
56
-
ns
tf(i)
Current fall time
-
37
-
ns
tc(off)
Crossing time
-
84
-
ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
Source-drain current (pulsed)
-
130
520
A
A
ISDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current (pulsed)
-
520
A
VSD
(2)
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD = 130 A, VGS = 0
-
1.5
V
trr
Reverse recovery time
ISD = 130 A, di/dt = 100 A/µs
VDD = 100 V (see Figure 16)
-
570
ns
Qrr
Reverse recovery charge
-
15
µC
IRRM
Reverse recovery current
-
53
A
trr
Reverse recovery time
ISD = 130 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 16)
-
720
ns
Qrr
Reverse recovery charge
-
24
µC
IRRM
Reverse recovery current
-
68
A


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