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STGB4M65DF2 Datasheet(PDF) 3 Page - STMicroelectronics |
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STGB4M65DF2 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 18 page STGB4M65DF2 Electrical ratings DocID028667 Rev 4 3/18 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (VGE = 0 V) 650 V IC Continuous collector current at TC = 25 °C 8 A Continuous collector current at TC = 100 °C 4 A ICP(1) Pulsed collector current 16 A VGE Gate-emitter voltage ±20 V IF Continuous forward current at TC = 25 °C 8 A Continuous forward current at TC = 100 °C 4 A IFP(1) Pulsed forward current 16 A PTOT Total dissipation at TC = 25 °C 68 W TSTG Storage temperature range - 55 to 150 °C TJ Operating junction temperature range - 55 to 175 °C Notes: (1)Pulse width limited by maximum junction temperature. Table 3: Thermal data Symbol Parameter Value Unit RthJC Thermal resistance junction-case IGBT 2.2 °C/W RthJC Thermal resistance junction-case diode 5 °C/W RthJA Thermal resistance junction-ambient 62.5 °C/W |
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