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STGB4M65DF2 Datasheet(PDF) 3 Page - STMicroelectronics

No. de pieza STGB4M65DF2
Descripción Electrónicos  Trench gate field-stop IGBT, M series 650 V, 4 A low loss
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGB4M65DF2 Datasheet(HTML) 3 Page - STMicroelectronics

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STGB4M65DF2
Electrical ratings
DocID028667 Rev 4
3/18
1
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
VCES
Collector-emitter voltage (VGE = 0 V)
650
V
IC
Continuous collector current at TC = 25 °C
8
A
Continuous collector current at TC = 100 °C
4
A
ICP(1)
Pulsed collector current
16
A
VGE
Gate-emitter voltage
±20
V
IF
Continuous forward current at TC = 25 °C
8
A
Continuous forward current at TC = 100 °C
4
A
IFP(1)
Pulsed forward current
16
A
PTOT
Total dissipation at TC = 25 °C
68
W
TSTG
Storage temperature range
- 55 to 150
°C
TJ
Operating junction temperature range
- 55 to 175
°C
Notes:
(1)Pulse width limited by maximum junction temperature.
Table 3: Thermal data
Symbol
Parameter
Value
Unit
RthJC
Thermal resistance junction-case IGBT
2.2
°C/W
RthJC
Thermal resistance junction-case diode
5
°C/W
RthJA
Thermal resistance junction-ambient
62.5
°C/W


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