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LM2889 Datasheet(PDF) 2 Page - National Semiconductor (TI) |
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LM2889 Datasheet(HTML) 2 Page - National Semiconductor (TI) |
2 / 10 page Absolute Maximum Ratings If MilitaryAerospace specified devices are required please contact the National Semiconductor Sales OfficeDistributors for availability and specifications Supply Voltage 18VDC Power Dissipation Package (Note 1) 700 mW Operating Temperature Range 0 Cto a70 C Storage Temperature Range b 55 Cto a150 C (V14 – V13) Max g 5VDC (V12 – V8) Max 7VDC (V12 – V9) Max 7VDC Lead Temperature (Soldering 10 seconds) 260 C DC Electrical Characteristics (DC test circuit all switches normally pos 1 VSe12V VAe2V VBeVCe10V) Parameter Conditions Min Typ Max Units Supply Current IS 10 16 25 mA Sound Oscillator Current DI13 Change VA from b2V to a2V 02 035 06 mA Sound Oscillator Zener Current I13 085 mA Sound Modulator Audio Current DI13 Change SW2 from Pos 1 to Pos 2 09 mA Video Clamp Voltage V2 Unloaded 50 525 55 VDC Loaded SW3 Pos 3 51 VDC Video Clamp Capacitor Discharge SW3 Pos 2 20 m A Current (VS–V2)105 Ch A Oscillator OFF Voltage V6 V7 SW1 Pos 2 2 mVDC Ch A Oscillator Current Level I7 VBe10V VCe11V 25 35 50 mA Ch B Oscillator OFF Voltage V4 V5 2 mVDC Ch B Oscillator Current Level I4 SW1 Pos 2 VBe10V VCe11V 25 35 50 mA Ch A Modulator Conversion Ratio Measure DV9 by Changing from D V9(V11-V10) VBe10V VCe11V to VBe11V 03 050 075 VV VCe10V Divide by V11–V10 Ch B Modulator Conversion Ratio SW1 Pos 2 Measure DV8 by D V8(V11 – V10) Changing from VBe10V VCe11V 03 050 075 VV to VBe11V VCe10V Divide by V11 – V10 AC Electrical Characteristics (AC test circuit VSe12V) Parameter Conditions Min Typ Max Units Sound Carrier Oscillator Level V Vpp Sound Modulator Deviation D f DVIN SW Pos Change VIN from V HzmV to V Measure Df at Pin Divide as Shown Ch RF Oscillator Level n n Ch Sw Pos fe MHz Use FET Probe mVpp Ch RF Oscillator Level n n Ch Sw Pos fe MHz Use FET Probe mVpp RF Modulator Conversion Gain nOUT V V Ch Sw Pos fe MHz Note mVrmsV Note 1 For operation in ambient temperatures above 25 C the device must be derated based on a 150 C maximum junction temperature and a thermal resistance of 80 CW junction to ambient Note 2 Conversion gain shown is measured with 75X input RF meter which makes the AC RF output load 375X 2 |
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