STGD4M65DF2 datasheet(4/19 Pages) STMICROELECTRONICS

No. de pieza	STGD4M65DF2

Descripción Electrónicos	Trench gate field-stop IGBT, M series 650 V, 4 A low loss

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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Electrical characteristics

STGD4M65DF2

4/19

DocID028676 Rev 4

2

Electrical characteristics

TC = 25 °C unless otherwise specified

Table 4: Static characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter breakdown

voltage

VGE = 0 V, IC = 250 µA

650

V

VCE(sat)

Collector-emitter saturation

voltage

VGE = 15 V, IC = 4 A

1.6

2.1

V

VGE = 15 V, IC = 4 A,

TJ = 125 °C

1.9

VGE = 15 V, IC = 4 A,

TJ = 175 °C

2.1

VF

Forward on-voltage

IF = 4 A

1.9

V

IF = 4 A, TJ = 125 °C

1.7

IF = 4 A, TJ = 175 °C

1.6

VGE(th)

Gate threshold voltage

VCE = VGE, IC = 250 µA

5

6

7

V

ICES

Collector cut-off current

VGE = 0 V, VCE = 650 V

25

µA

IGES

Gate-emitter leakage

current

VCE = 0 V, VGE = ± 20 V

±250

µA

Table 5: Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Input capacitance

VCE= 25 V, f = 1 MHz,

VGE = 0 V

-

369

-

pF

Coes

Output capacitance

-

24.8

-

Cres

Reverse transfer

capacitance

-

8

-

Qg

Total gate charge

VCC = 520 V, IC = 4 A,

VGE = 15 V

(see Figure 30: " Gate charge

test circuit")

-

15.2

-

nC

Qge

Gate-emitter charge

-

3

-

Qgc

Gate-collector charge

-

7

-

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