STGD6M65DF2 datasheet(5/20 Pages) STMICROELECTRONICS

No. de pieza	STGD6M65DF2

Descripción Electrónicos	Trench gate field-stop IGBT, M series 650 V, 6 A low loss

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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STGD6M65DF2

Electrical characteristics

DocID028703 Rev 3

5/20

Table 6: IGBT switching characteristics (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay

time

VCE = 400 V, IC = 6 A, VGE = 15 V,

RG = 22

Ω (see Figure 29: " Test circuit

for inductive load switching" )

15

-

ns

tr

Current rise

time

5.8

-

ns

(di/dt)on

Turn-on

current slope

828

-

A/µs

td(off)

Turn-off-delay

time

90

-

ns

tf

Current fall

time

130

-

ns

Eon(1)

Turn-on

switching

energy

0.036

-

mJ

Eoff(2)

Turn-off

switching

energy

0.200

-

mJ

Ets

Total switching

energy

0.236

-

mJ

td(on)

Turn-on delay

time

VCE = 400 V, IC = 6 A, VGE = 15 V,

RG = 22

Ω TJ = 175 °C (see Figure 29: "

Test circuit for inductive load switching" )

17

-

ns

tr

Current rise

time

7

-

ns

(di/dt)on

Turn-on

current slope

685

-

A/µs

td(off)

Turn-off-delay

time

86

-

ns

tf

Current fall

time

205

-

ns

Eon(1)

Turn-on

switching

energy

0.064

-

mJ

Eoff(2)

Turn-off

switching

energy

0.290

-

mJ

Ets

Total switching

energy

0.354

-

mJ

tsc

Short-circuit

withstand time

VCC

≤ 400 V, VGE = 15 V, TJstart = 150 °C

6

-

µs

VCC

≤ 400 V, VGE = 13 V, TJstart = 150 °C

10

-

µs

Notes:

(1)Turn-on switching energy includes reverse recovery of the diode.

(2)Turn-off switching energy also includes the tail of the collector current.

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