STGW10M65DF2 datasheet(5/16 Pages) STMICROELECTRONICS

No. de pieza	STGW10M65DF2

Descripción Electrónicos	Trench gate field-stop IGBT, M series 650 V, 10 A low loss

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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STGW10M65DF2

Electrical characteristics

DocID029083 Rev 1

5/16

Table 6: IGBT switching characteristics (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VCE = 400 V, IC = 10 A,

VGE = 15 V, RG = 22

Ω

(see Figure 29: " Test

circuit for inductive load

switching" )

19

-

ns

tr

Current rise time

7.4

-

ns

(di/dt)on

Turn-on current slope

1086

-

A/µs

td(off)

Turn-off-delay time

91

-

ns

tf

Current fall time

92

-

ns

Eon(1)

Turn-on switching energy

0.12

-

mJ

Eoff(2)

Turn-off switching energy

0.27

-

mJ

Ets

Total switching energy

0.39

-

mJ

td(on)

Turn-on delay time

VCE = 400 V, IC = 10 A,

VGE = 15 V, RG = 22

Ω

TJ = 175 °C (see Figure

29: " Test circuit for

inductive load switching" )

18

-

ns

tr

Current rise time

9

-

ns

(di/dt)on

Turn-on current slope

890

-

A/µs

td(off)

Turn-off-delay time

90

-

ns

tf

Current fall time

170

-

ns

Eon(1)

Turn-on switching energy

0.26

-

mJ

Eoff(2)

Turn-off switching energy

0.4

-

mJ

Ets

Total switching energy

0.66

-

mJ

tsc

Short-circuit withstand time

VCC

≤ 400 V, VGE = 13 V,

TJstart = 150 °C

10

-

µs

VCC

≤ 400 V, VGE = 15 V,

TJstart = 150 °C

6

-

Notes:

(1)Including the reverse recovery of the diode.

(2)Including the tail of the collector current.

Table 7: Diode switching characteristics (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

trr

Reverse recovery time

IF = 10 A, VR = 400 V,

VGE = 15 V (see Figure 29: "

Test circuit for inductive load

switching") di/dt = 1000 A/µs

-

96

ns

Qrr

Reverse recovery charge

-

373

nC

Irrm

Reverse recovery current

-

13

A

dIrr/dt

Peak rate of fall of reverse

recovery current during tb

-

661

A/µs

Err

Reverse recovery energy

-

52

µJ

trr

Reverse recovery time

IF = 10 A, VR = 400 V,

VGE = 15 V TJ = 175 °C

(see Figure 29: " Test circuit

for inductive load switching")

di/dt = 1000 A/µs

-

201

ns

Qrr

Reverse recovery charge

-

1352

nC

Irrm

Reverse recovery current

-

19

A

dIrr/dt

Peak rate of fall of reverse

recovery current during tb

-

405

A/µs

Err

Reverse recovery energy

-

150

µJ

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