STP11N60DM2 datasheet(3/12 Pages) STMICROELECTRONICS

No. de pieza	STP11N60DM2

Descripción Electrónicos	N-channel 600 V, 0.370 (ohm) typ., 10 A MDmesh DM2 Power MOSFET in a TO-220 package

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STP11N60DM2

Electrical ratings

DocID029388 Rev 1

3/12

1

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

±25

V

ID

Drain current (continuous) at Tcase = 25 °C

10

A

Drain current (continuous) at Tcase = 100 °C

6.3

IDM(1)

Drain current (pulsed)

40

A

PTOT

Total dissipation at Tcase = 25 °C

110

W

dv/dt(2)

Peak diode recovery voltage slope

40

V/ns

dv/dt(3)

MOSFET dv/dt ruggedness

50

Tstg

Storage temperature range

-55 to 150

°C

Tj

Operating junction temperature range

Notes:

(1) Pulse width is limited by safe operating area.

(2) ISD ≤ 10 A, di/dt=900 A/μs; VDS peak < V(BR)DSS,VDD = 400 V

(3) VDS ≤ 480 V.

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

1.14

°C/W

Rthj-amb

Thermal resistance junction-ambient

62.5

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR(1)

Avalanche current, repetitive or not repetitive

2.5

A

EAS(2)

Single pulse avalanche energy

250

mJ

Notes:

(1) pulse width limited by Tjmax

(2) starting Tj = 25 °C, ID = IAR, VDD = 50 V.

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