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STP11N60DM2 Datasheet(PDF) 5 Page - STMicroelectronics |
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STP11N60DM2 Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 12 page STP11N60DM2 Electrical characteristics DocID029388 Rev 1 5/12 Table 8: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD(1) Source-drain current - 10 A ISDM(2) Source-drain current (pulsed) - 40 A VSD(3) Forward on voltage VGS = 0 V, ISD = 10 A - 1.6 V trr Reverse recovery time ISD = 10 A, di/dt = 100 A/µs, VDD = 60 V (see Figure 16: "Test circuit for inductive load switching and diode recovery times") - 90 ns Qrr Reverse recovery charge - 248 µC IRRM Reverse recovery current - 5.5 A trr Reverse recovery time ISD = 10 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C (see Figure 16: "Test circuit for inductive load switching and diode recovery times") - 160 ns Qrr Reverse recovery charge - 664 nC IRRM Reverse recovery current - 8.3 A Notes: (1) Limited by maximum junction temperature. (2) Pulse width is limited by safe operating area. (3) Pulse test: pulse duration = 300 µs, duty cycle 1.5%. Table 9: Gate-source Zener diode Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)GSO Gate-source breakdown voltage IGS = ±250 µA, ID = 0 A ±30 - - V The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for additional external componentry. |
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