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IRF530N Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IRF530N Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor IRF530N · FEATURES · Low RDS(on) · VGS Rated at ±20V · Silicon Gate for Fast Switching Speed · Rugged · Low Drive Requirements · DESCRITION · Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ± 20 V ID Drain Current-Continuous 17 A IDM Drain Current-Single Plused 68 A PD Total Dissipation @TC=25℃ 79 W Tj Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.9 ℃ /W Rth j-a Thermal Resistance,Junction to Ambient 60 ℃ /W |
Número de pieza similar - IRF530N |
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Descripción similar - IRF530N |
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